IRF1404ZPBF N Channel Transistor 180A 200W HEXFET FET MOSFET
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... Hole TO-220AB Specification: Category Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Mfr Infineon Technologies Series HEXFET® Package Tube FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss)...
Guangzhou Topfast Technology Co., Ltd.
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IRF1404ZPBF N Channel Transistor 180A 200W HEXFET FET MOSFET
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...Transistors - FETs, MOSFETs - Single Mfr Infineon Technologies Series HEXFET® Package Tube FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40 V Current - Continuous Drain (Id) @ 25°C 180A (Tc) Drive Voltage (Max Rds On,...
Angel Technology Electronics Co
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Integrated Circuit Chip IRF7220PBF---HEXFET Power MOSFET
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...HEXFET Power MOSFET Specifications: Datasheets IRF7220PbF Product Photos 8-SOIC Design Resources IRF7220 Saber Model IRF7220 Spice Model PCN Obsolescence Multiple Devices 14/Dec/2012 Standard Package 4,000 Category Discrete Semiconductor Products Family FETs - Single Series HEXFET® Packaging Tape & Reel (TR) FET Type MOSFET P-Channel, Metal Oxide FET......
Mega Source Elec.Limited
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IRF3205PBF# Hexfet Power Mosfet 10A 55V 200W INFINEON Original
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...Hexfet Power Mosfet 10A 55V 200W Field - effect tube inverter high - power Mosfet tube Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free Description Advanced HEXFET® Power MOSFETs......
DELI ELECTRONICS TECHNOLOGY CO.,LTD
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AOK2500L Field Effect Transistor Transistors FETs MOSFETs Single
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... (Qg) (Max) @ Vgs 136nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 6460pF @ 75V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 3.1W (Ta), 500W (Tc) Rds On (Max) @ Id,...
KZ TECHNOLOGY (HONGKONG) LIMITED
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N- Channel Mosfet Power Transistor 55V 110A 200W Through Hole TO-220AB IRF3205PBF
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...MOSFET 55V 110A 200W Through Hole TO-220AB Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs......
Shenzhen Koben Electronics Co., Ltd.
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P Channel DIP Mosfet Power Transistor 100V 40A 200W TO-220 IRF5210PBF Lead Free
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...200W TO-220 DIP Mosfet Power Transistor Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs......
Shenzhen ATFU Electronics Technology ltd
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IRFR2405TRPBF MOSFET Power Electronics N-Channel HEXFET power Package TO-252
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...) @ Vgs 110 nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2430 pF @ 25 V FET Feature -...
Shenzhen Sai Collie Technology Co., Ltd.
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IPB017N10N5LFATMA1 MOSFET N-CH 100V 180A TO263-7 Support BOM Quotation
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... transistor FET, MOSFET single FET, MOSFET manufacturer Infineon Technologies series OptiMOS™-5 FET type N-channel technology MOSFET (metal oxide) Leakage source voltage (Vdss) 100 V Current at 25 ° C - Continuous drain (Id) 180A(Tc) Drive voltage...
DINGCEN INTERNATIONAL (HK) LIMITED
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100v 180a Diode Electronic Component IPB180N10S402ATMA1 MOSFET N-CH TO263-7
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... Tape (CT) Digi-Reel® Product Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 180A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On...
J&T ELECTRONICS LTD
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