PMDXB600UNE 20V Dual N Channel Trench MOSFET Transistors 6 XFDFN Package
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... ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Specification Of PMDXB600UNE Product Status Active FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss)...
ShenZhen Mingjiada Electronics Co.,Ltd.
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AON7407 MOSFET Power Electronics P-Channel 20V Single FETs MOSFETs Surface Mount Package 8-DFN-EP
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AON7407 MOSFET Power Electronics P-Channel 20V Single FETs MOSFETs Surface Mount Package 8-DFN-EP FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id) @ 25°C 14.5A (Ta), ......
Shenzhen Sai Collie Technology Co., Ltd.
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6.0A 20V SOP-8 Mosfet Power Transistor For Battery Protection
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...20V SOP-8 Mosfet Power Transistor For Battery Protection General Description: The AP9926A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 20V......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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6.0A 20V SOP-8 Mosfet Power Transistor For Battery Protection
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...20V SOP-8 Mosfet Power Transistor For Battery Protection General Description: The AP9926A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 20V......
Beijing Silk Road Enterprise Management Services Co.,LTD
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SI2333DDS-T1-GE3 20V P-Channel MOSFET 4.1A Continuous Current 0.045Ω Rds(on) 1.8V Logic-Level Drive TO-236-3 SC-59 SOT-23-3 -55°C to +150°C AEC-Q101 Qualified
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...MOSFET andbull; 100 % Rg Tested andbull; Material categorization: For definitions of compliance please see andnbsp; APPLICATIONS andbull; Smart Phones and Tablet PCs - Load Switch - Battery Switch andnbsp; Overview The Sl2333DDS-T1-GE3 is an advanced 20V P-channel MOSFET......
TOP Electronic Industry Co., Ltd.
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BD135 Silicon NPN Power Transistors high voltage power mosfet dual power mosfet
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BD135 Silicon NPN Power Transistors high voltage power mosfet dual power mosfet This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. ......
Anterwell Technology Ltd.
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High Power MOSFET ECH8660 Complementary Dual Power MOSFET, -30V, -4.5A, 59mΩ
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High Power MOSFET ECH8660 Complementary Dual Power MOSFET, -30V, -4.5A, 59mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize in ......
Sunbeam Electronics (Hong Kong) Limited
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BF981 N Channel 20mA 225mW Silicon Dual Gate Mosfet
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Double gate N channel field effect Cross tube radio frequency audion package To-50 Silicon N - Channel Dual Gate Mos -Fet 20V 20mA 225mW Descriptions: Depletion type fieldeffect transistor in a plastic X-package with source and substrate interconnected, ......
DELI ELECTRONICS TECHNOLOGY CO.,LTD
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BD135 Silicon NPN Power Transistors high voltage power mosfet dual power mosfet
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BD135 Silicon NPN Power Transistors high voltage power mosfet dual power mosfet This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. ......
ChongMing Group (HK) Int'l Co., Ltd
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IGBT Power Module VMK165-007T Dual Power MOSFET Module IXYS IGBT Power Module
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VMK165-007T is a Dual Power MOSFET Module. Part NO: VMK165-007T Brand: IXYS Mounting Type: Screws Date Code: 01+ Quality Warranty: 3 Months Overview We ......
Mega Source Elec.Limited
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