BF981 N Channel 20mA 225mW Silicon Dual Gate Mosfet
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Double gate N channel field effect Cross tube radio frequency audion package To-50 Silicon N - Channel Dual Gate Mos -Fet 20V 20mA 225mW Descriptions: Depletion type fieldeffect transistor in a plastic X-package with source and substrate interconnected, ......
DELI ELECTRONICS TECHNOLOGY CO.,LTD
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Automotive IGBT Modules DF11MR12W1M1PB11BPSA1 1200V Silicon Carbide CoolSiC MOSFET
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...Channel (Dual) MOSFET Arrays. Specification Of DF11MR12W1M1PB11BPSA1 Part Number DF11MR12W1M1PB11BPSA1 Technology Silicon Carbide (SiC) Current - Continuous Drain (Id) @ 25°C 50A (Tj) Gate Charge (Qg) (Max) @ Vgs 124nC @ 15V Input Capacitance (Ciss)...
ShenZhen Mingjiada Electronics Co.,Ltd.
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High Durability Silicon Low Gate Threshold Voltage Mosfet TO-251
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...Silicon Low Gate Threshold Voltage Mosfet TO-251 Product Description: Our MOSFET is made of high-quality silicon material, ensuring its durability and reliability. It also has a lead-free status, meeting the RoHS standards for environmental protection. The MOSFET......
Guangdong Lingxun Microelectronics Co., Ltd
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BD135 Silicon NPN Power Transistors high voltage power mosfet dual power mosfet
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BD135 Silicon NPN Power Transistors high voltage power mosfet dual power mosfet This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. ......
Anterwell Technology Ltd.
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BD135 Silicon NPN Power Transistors high voltage power mosfet dual power mosfet
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BD135 Silicon NPN Power Transistors high voltage power mosfet dual power mosfet This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. ......
ChongMing Group (HK) Int'l Co., Ltd
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1200V 300A IGBT Module FF300R12KT4 Silicon Dual Configuration ROHS Approval
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IGBT Module FF300R12KT4 Kollektor-Emitter-Sättigungsspannung Collector-emittersaturationvoltage IC = 300 A, VGE = 15 V IC = 300 A, VGE = 15 V IC = 300 A, VGE = 15 V VCE sat 1,75 2,05 2,10 2,15 V V V Tvj = 25°C Tvj = 125°C Tvj = 150°C Gate-Schwellenspannung......
Shenzhen Hongxinwei Technology Co., Ltd
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D2010uk Gold Metallised Silicon Rf Power Mosfet Dmos Metal Gate 50 To 1000 Mhz 20w
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D2010UK N/A Electronic Components IC MCU Microcontroller Integrated Circuits D2010UK #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width:......
Shenzhen Kaigeng Technology Co., Ltd.
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MMBF170LT1G MOSFET Power Electronics N-Channel 60 V 500mA 225mW Surface Mount SOT-23-3
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...MOSFET Power Electronics N-Channel 60 V 500mA 225mW Surface Mount SOT-23-3 FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25 V Current - Continuous Drain (Id) @ 25°C 460mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.7V, 4.5V Rds On (Max) @ Id, Vgs 1.1Ohm @ 500mA, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate......
Shenzhen Sai Collie Technology Co., Ltd.
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DMN2004DMK-7 Field Effect Transistor Transistors FETs MOSFETs Arrays
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...(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 150pF @ 16V Power - Max 225mW Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-23-6...
KZ TECHNOLOGY (HONGKONG) LIMITED
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Multiscene Silicon Carbide MOSFET Multi Function For UPS Power Supply
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Silicon Carbide Low On Resistance Field Effect Transistor for UPS Power Supply Product Description: Silicon Carbide (SiC) MOSFET is a high-frequency, high-efficiency Metal Oxide Semiconductor Field Effect Transistor (MOSFET) based on Silicon Carbide material. This MOSFET has a wide working temperature range, low on-resistance, high-frequency operation, low gate......
Reasunos Semiconductor Technology Co., Ltd.
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