2 Inch DSP SSP Gallium Nitride Wafer A Axis Sapphire Substrates GaN Epitaxial Templates
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2inch R-axis sapphire wafer for epi-ready test ,sapphire optical windows, R-axis 2inch sapphire epi-ready substrate 1. Description Sapphire is one of the hardest materials, and possesses very good transmission during the range of visible and near IR ......
SHANGHAI FAMOUS TRADE CO.,LTD
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10*10mm2 Mg-Doped GaN Epitaxial Wafers On Sapphire Substrates For GaN Power Amplifier
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...GaN Epitaxial Wafers On Sapphire Substrates For GaN Power Amplifier PAM-XIAMEN’s Template Products consist of crystalline layers of gallium nitride (GaN), aluminum nitride (AlN),aluminum gallium nitride (AlGaN)and indium gallium nitride (InGaN), which are deposited on sapphire substrates. PAM-XIAMEN’s Template Products enable 20-50% shorter epitaxy cycle times and higher quality epitaxial......
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
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2inch 4Inch Gallium Nitride GaN AlN Template Wafer On Sapphire,Si Substrates
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.... Product Aluminum nitride (AlN) film Product Description: AllN Epitxial proposed model saphhire hydride vapor phase epitaxy (HVPE) method. Aluminum nitride film is also cost-effective way to replace the...
SHANGHAI FAMOUS TRADE CO.,LTD
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ZnO Crystal Substrate Is Used In GaN(blue LED) Epitaxial Substrate Wide Band Connection Devices And Other Fields
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...GaN(blue LED) epitaxial substrate wide band connection devices and other fields Zinc oxide (ZnO) crystal substrate is widely used in GaN(blue LED) epitaxial substrate, wide band connected devices and other fields. Zinc oxide single crystal is a good substrate material for GaN......
Hangzhou Freqcontrol Electronic Technology Ltd.
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4 inch GaN-on-Si epi wafer manufacturer for Power HEMT
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... on a Silicon (111) substrate for power & RF applications.Each layer can be customized. The benifits of using GaN epi wafers: 5G-related RF devices, such as power amplifier High-efficiency power electronics devices, such as power supplies, ......
Homray Material Technology
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Silicon Back Grinding Wheels Sapphire Epitaxial Wafer For Simiconductor Field
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..., silicon wafer, gallium arsenide and GaN wafer. This kind of grinding wheel developed in out company can replace foreign products. They can be used steadily on the Japanese, Korean grinders with high ......
SIGNI INDUSTRIAL (SHANGHAI) CO., LTD
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GaN Templates 2 & 4 inch
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...GaN Templates: Dimensions:Ф 50.8mm ± 0.1mm Thickness:4 µm, 20 µm; 4 µm Orientation:C-plane(0001) ± 0.5° Conduction Type:N-type(Undoped); N-type(Si-doped); P-type(Mg-doped) Resistivity(300K): < 0.5 Ω·cm; < 0.05 Ω·cm; ~ 10 Ω·cm Carrier Concentration: < 5x1017 cm-3; > 1x1018 cm-3; > 6x1016 cm-3 Mobility: ~ 300cm2/V·s; ~ 200 cm2/V·s; ~ 10 cm2/V·s Dislocation Density: Less than 5x108 cm-2 Substrate structure: GaN......
Chongqing Newsin Technology Co., Ltd
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200mm 300mm Sapphire Wafer Single Side Polished Wafer
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... optical grade Kyropoulos grown sapphire crystals. high purity single crystal sapphire epitaxial substrate is suitable for direct epitaxial process, PSS process, ALN process and other epitaxial methods. It has the characteristics of uniform wavelength,...
Chongqing Silian Optoelectronic Science & Technology Co., Ltd.
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Etching Tray Semiconductor Consumables Sintered Silicon Carbide Ceramic
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..., corrosion resistance, wear resistance, long service life, high precision and good etching uniformity of wafer epitaxy layer. Application ICP etching process of epitaxial film materials(GaN, SiO 2, etc.) for LED wafer chips, precision ceramic parts for...
China Abrasives Industry Hainan Corporation
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