2inch Sapphire Substrate Wafer High Purity Al2O3 99.999% DSP Diameter 50.8mm
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2inch Sapphire Substrate Wafer High Purity Al2O3 99.999% DSP Diameter 50.8mm Product Description Sapphire Substrate is a premium-grade single-crystal carrier made from Al2O3 material, known for its exceptional quality and superior properties. It is specifically designed to meet the stringent requirements of high-end optical, optoelectronic, and semiconductor device applications. One key feature of the Sapphire Substrate......
SHANGHAI FAMOUS TRADE CO.,LTD
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2 Inch 50.8mm Sapphire Substrate Wafer Double Side Polished M Axis C Axis A Axis
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...50.8 Sapphire Substrate wafer Double Side Polished M Axis C Axis A Axis Special Orientation SSP/ DSP A-axis <11-20> R-axis <1-102> M-axis<10-10> 2inch 3inch 4inch 6inch sapphire substrates wafers for GaN epitaxial growth；0.1mm/100um 2inch sapphire c-axis substrates The Detail for 2inch c-axis wafers Sapphire is a single alumina crystal and the second-hardest material in nature, after diamond. Sapphire......
SHANGHAI FAMOUS TRADE CO.,LTD
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Reliable Sapphire Substrate With TTV ≤3μM For Precision Applications
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...Sapphire Substrate with TTV ≤3μm for Precision Applications Product Description: Sapphire Slice/Plate/Wafer is a precision product made of sapphire crystal. It features high parallelism (≤3 Arc Sec), diameter (2inch-8inch), orientation (±30'), bow & warp (≤20μm) and thickness (0.5mm-3mm). It is widely used in electronic, optoelectronic, aerospace, and other high-tech industries. Sapphire......
Hangzhou Freqcontrol Electronic Technology Ltd.
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Sapphire Substrate 180LM 3000K G4 G9 2.3W Led Bulb
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Sapphire Substrate 180LM 3000K G4 G9 2.3W Led Bulb Color Clear Finish Finished Power Source Corded-electric Voltage 120 Volts Wattage 2.3 watts Item Package Quantity 1 Type of Bulb Led Measurement System English/Standard G9 2W LED BULB Quick Detail: FULL ......
Changzhou Filamentlux Smart Technology Co., LTD
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10*10mm2 Mg-Doped GaN Epitaxial Wafers On Sapphire Substrates For GaN Power Amplifier
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...Sapphire Substrates For GaN Power Amplifier PAM-XIAMEN’s Template Products consist of crystalline layers of gallium nitride (GaN), aluminum nitride (AlN),aluminum gallium nitride (AlGaN)and indium gallium nitride (InGaN), which are deposited on sapphire substrates. PAM-XIAMEN’s Template Products enable 20-50......
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
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200mm 300mm Sapphire Wafer Single Side Polished Wafer
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... optical grade Kyropoulos grown sapphire crystals. high purity single crystal sapphire epitaxial substrate is suitable for direct epitaxial process, PSS process, ALN process and other epitaxial methods. It has the characteristics of uniform wavelength,...
Chongqing Silian Optoelectronic Science & Technology Co., Ltd.
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GaN on Sapphire wafer manufacturer 2 Inch GaN Substrate
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GaN on Sapphire wafer manufacturer 2 Inch GaN SubstrateAs the leading manufacturer of GaN substrate, Homray Material Technology provide GaN On Sapphire wafer. The size are 2inch and 4 inch. GaN layer thickness is 4.5um±0.5um or 20um±2um. @font-face{ font......
Homray Material Technology
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Nylon Furniture Plate Castor 1.5-3inch Light Duty Installation Height 50mm/62mm/80mm/93mm
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Product Name Light Duty Nylon Casters Series Application Tool Cabinet, Machinery Caster size 1.5INCH; 2INCH; 2.5INCH; 3INCH; Caster kind Rigid, Swivel, Brake, Screw Specification 1.5INCH 2INCH 2.5INCH 3INCH Wheel Diameter(mm) 37mm 46mm 63mm 75mm Wheel ......
Hengshui Koster Hardware Products Co., Ltd
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provide reliable quality E27 2w globe bulb-led filament light bulb
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...Substrate Material Power Supply Type Prodcut Size Packing Size PCS/CTN NS-SR005-2W 2700K-6500K 2W ≥80 120lm/w 240lm sapphire capacitance-resistance full glass cover Ф45mm x H70mm 50 x 50 x 80mm 200 NS-SR005-2W 2700K-6500K 2W ≥80 120lm/w 240lm sapphire constant-current full glass cover Ф45mm x H70mm 50 x 50 x 80mm......
NEWSOAR LIGHTING CO., LTD.
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GaN Templates 2 & 4 inch
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...50.8mm ± 0.1mm Thickness:4 µm, 20 µm; 4 µm Orientation:C-plane(0001) ± 0.5° Conduction Type:N-type(Undoped); N-type(Si-doped); P-type(Mg-doped) Resistivity(300K): < 0.5 Ω·cm; < 0.05 Ω·cm; ~ 10 Ω·cm Carrier Concentration: < 5x1017 cm-3; > 1x1018 cm-3; > 6x1016 cm-3 Mobility: ~ 300cm2/V·s; ~ 200 cm2/V·s; ~ 10 cm2/V·s Dislocation Density: Less than 5x108 cm-2 Substrate structure: GaN on Sapphire......
Chongqing Newsin Technology Co., Ltd
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