2um - 300um Technical Ceramic Parts Silicon On Insulator SOI Wafer
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...circuit fabrication . SOI wafer provide a potential solution for high speed and low power consumption device and has been widely acknowledged as a new solution for high voltage and RF components. SOI wafer is a sandwich structure including a device layer (...
HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD
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Soi Wafer Silicon on Insulator Semiconductor Wafer
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Soi Wafer Silicon on Insulator Semiconductor Wafer SOI Wafer (Silicon On Insulator) * SOI Wafer sizes from 3" to 200mm, some in inventory * Very high quality with tight TTV on device layer thickness * Direct Si-Si bonding and double sided SOI available * Any Si orientation, any device thickness over 1.5um * Single and double side polished * Small lot sizes and Laser marking of wafers available * Short lead time delivery TYPES OF SOI WAFER...
Shenzhen A.N.G Technology Co., Ltd
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SOI Wafer P Type N Type 6 Inch 8 Inch 12 Inch Surface Polish SSP/DSP
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SOI wafer P Type N Type 6 inch 8 inch 12 inch Surface polish SSP/DSP Abstract of SOI wafer Silicon on Insulator (SOI) is an advanced semiconductor technology where a thin insulating layer, typically silicon dioxide (SiO₂), is inserted between the silicon......
SHANGHAI FAMOUS TRADE CO.,LTD
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IC Silicon Wafer With Flatness <50um No Defects
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...Wafer Our high-quality IC Silicon Wafers are made of superior silicon material and are available in 6-inch, 4-inch, 6-inch and 8-inch SOI wafers. The surface of these IC Silicon Wafers is free from any defects and the resistivity ranges from 1 to 10 ohm. Moreover, the particle density on the surface of these SOI silicon wafers is less than 30 per cm2 and the warp is less than 20um. Our IC Silicon Wafers......
SHANGHAI FAMOUS TRADE CO.,LTD
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2 Inch C Plane Polished Sapphire Wafers Crystal Substrates
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...Wafers Sapphire Substrates Specification: Single crystal Al2O3 99.999％ Orientation: R-axis 0.5° Diameter:50.8±0.1mm Thickness :430±15um or 330±15um Primary flat:16±1mm OF Orientation flat: Off R to C axis 45°±0.1° C-plane(0001) Frontside Surface Roughness:Ra＜0.2nm Backside Surface Roughness: 0.8~1.2um......
Hangzhou Freqcontrol Electronic Technology Ltd.
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1μm Metal Filter Media For Semi-conductor Process Gas Purification ---Wafer Manufacture With AMC Control
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1μm Metal Filter Element(Nanoscale)for Semi-conductor Process Gas Purification Product type: Ultrafine 316L stainless steel short fiber Fiber Diameter: 1um/1.5um/2um available Cut Length: 80-100um Chemical Composition of Raw material( Wt% ) Elements C Si ......
Hunan Huitong Advanced Materials Co., Ltd.
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