HM10N10K 9.6A 100V N Channel MOSFET TO 252 Discrete Semiconductor Products
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HM10N10K TO-252 Electronic Components Diodes Engine Spot MOS FET N-Channel New Original HM10N10K #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border......
Shenzhen Kaigeng Technology Co., Ltd.
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FCD2250N80Z MOSFET Power Electronics TO-252AA Package N-Channel SuperFET® II MOSFET 800V 2.6A
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FCD2250N80Z MOSFET Power Electronics TO-252AA Package N-Channel SuperFET® II MOSFET 800V 2.6A FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800 V Current - Continuous Drain (Id) @ 25°C 2.6A (Tc) Drive Voltage (Max Rds......
Shenzhen Sai Collie Technology Co., Ltd.
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1.8V Specified Dual P Channel MOSFET FDMA291P -20V -6.6A 42mΩ
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High Power MOSFET FDMA291P P-Channel PowerTrench® MOSFET, 1.8V Specified, -20V, -6.6A, 42mΩ High Power MOSFET FDMA291P P-Channel PowerTrench® MOSFET, 1.8V Specified, -20V, -6.6A, 42mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is ......
Sunbeam Electronics (Hong Kong) Limited
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SPD06N80C3 N-Channel MOSFET 800V 6A (Ta) 83W (Tc) Surface Mount PG-TO252-3
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SPD06N80C3 N-Channel MOSFET 800V 6A (Ta) 83W (Tc) Surface Mount PG-TO252-3 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 6A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds......
Shenzhen Koben Electronics Co., Ltd.
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FS8205A Dual N Channel Enhancement Mode MOSFET 20V 6A
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...Channel Enhancement-Mode MOSFET (20V, 6A) 1.Description This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V) 2.Features RDS(on)=38mΩ@VGS=2.5V, ID=5.2A; RDS(on)=25mΩ@VGS=4.5V, ID=6A......
Shenzhen Hongxinwei Technology Co., Ltd
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SI2399DS Transistor SI2399DS-T1-GE3 P-Channel MOSFET Transistor 20V 6A SOT-23
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...ail Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V Rds On ......
Shenzhen Quanyuantong Electronics Co., Ltd.
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DMN10H220L-7 MOSFET 100V N Ch Enh FET 16Vgs 1.6A 1.3W
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...: SMD/SMT Package / Case: SOT-23-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 100 V Id - Continuous Drain Current: 1.6 A Rds On - Drain-Source Resistance: 220 ......
QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED
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TIP137 Triode Bipolar Power Transistor NPN 100V 6A TO-220-3 Package
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...6A TO220 Power Transistor Triode TIP137 Product Paramenters Manufacturer: Standard Packaging: Tube Product Category: MOSFET Brand: standard RoHS: Details Configuration: Single Technology: Si Fall Time: 77 ns Mounting Style: Through Hole Height: 16.3 mm Package / Case: TO-220-3 Length: 10.67 mm Transistor Polarity: N-Channel Product Type: MOSFET Number of Channels: 1 Channel......
ShenZhen QingFengYuan Technology Co.,Ltd.
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NDS331N 20V N-Channel MOSFET 1.6A Continuous 0.25Ω Rds(on) SOT-23 1.8V Logic Level -55°C to +150°C
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NDS331N 20V N-Channel MOSFET 1.6A Continuous 0.25andOmega; Rds(on) SOT-23 1.8V Logic Level -55anddeg;C to +150anddeg;C andnbsp; Features andnbsp;1.3 A, 20 V andnbsp;......
TOP Electronic Industry Co., Ltd.
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Dual Channel TPS22976DPUR 6A Load Drivers Chip 14WSON Integrated Circuit Chip
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... contains two N-channel MOSFETs that can operate over an input voltage range of 0.6 V to 5.7 V, and can support a maximum continuous current of 6 A per channel. Specification Of TPS22976DPUR Part Number TPS22976DPUR Switch Type General Purpose Number of...
ShenZhen Mingjiada Electronics Co.,Ltd.
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