3 Inch InP Crystal Dummy Prime Semiconductor Substrate
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2inch InP wafers 3inch 4inch N/P TYPE InP Semiconductor Substrate Wafers Doped S+/ Zn+ /Fe + growth (modified VFG method) is used to pull a single crystal through a boric oxide liquid encapsulant starting from a seed. The dopant (Fe, S, Sn or Zn)is added......
SHANGHAI FAMOUS TRADE CO.,LTD
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InP FP Epiwafer InP Substrate N/p Type 2 3 4 Inch With Thickeness Of 350-650um For Optical Net Work
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InP FP epiwafer InP substrate n/p type 2 3 4 inch with thickeness of 350-650um for optical net work InP epiwafer's Overview Indium Phosphide (InP) Epiwafer is a key material used in advanced optoelectronic devices, particularly Fabry-Perot (FP) laser diodes. InP Epiwafers consist of epitaxially grown layers on an InP substrate, designed for high-performance applications in telecommunications, data centers, and sensing technologies. InP......
SHANGHAI FAMOUS TRADE CO.,LTD
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P Type , Indium Phosphide Wafer , 4”, Test Grade -InP Wafer Manufacturing
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...InP Wafer Manufacturing PAM-XIAMEN provides single crystal InP(Indium phosphide) wafer for micro-electronic ( HBT/ HEMT ) and opto-electronic industry ( LED / DWDM / PIN / VCSELs ) in diameter up to 6 inch. Indium phosphide ( InP ) crystal is formed by two elements , Indium and Phosphide , growth by Liquid Encapsulated Czochralski ( LEC ) method or VGF method . InP......
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
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Dia 3 Inch 4 Inch Technical Ceramic Parts InP Based Epi Wafer
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InP Based Epi Wafer We provides MBE / MOCVD epitaxial growth of custom structure on InP substrate for microelectronics , optoelectronics and RF Microwave applications , in diameter Ø 2" to Ø 4” . With our extensive MOCVD experience , we can grow binary ......
HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD
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