IPW60R099C6 6R099C6 MOSFET N Channel IC 600V 37.9A 278W TO247
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... Product Detail Packaging Tube Part Status Not For New Designs FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 37.9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (......
Shenzhen Quanyuantong Electronics Co., Ltd.
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NTTFS3A08PZTAG Transistor Mosfet P Channel 20V 9A 8WDFN
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...MOSFETs Single P-CH 20V 9A 8WDFN P-Channel Products Description: 1. -20V,-15A,6.7 Mω, P-channel power MOSFET 2. P-channel 20V 9A (Ta) 840mW (Ta) Surface Mount 8-wdfn (3.3x3.3) 3. Trans MOSFET P-CH 20V 22A 8-Pin WDFN EP T/R 4. components -20V,-15A,6.7m ,P channel power MOSFETMOS NTTFS3A08PZTAG Improve Your Efficiency: One- Stop Electronic Components BOM List Kitting Service IC......
Shenzhen Res Electronics Limited
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SI2343CDS Integrated Circuit IC Chip P Channel 30V 5.9A Two Triple Tube
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... RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: SOT-23-3 Transistor Polarity: P-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 5.9 A Rds On - Drain-Source Resistance:...
QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED
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High Power FDMA2002NZ Dual N Channel Mosfet 30v 2.9A 123mΩ
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...MOSFET FDMA2002NZ Dual N-Channel PowerTrench® MOSFET 30V, 2.9A, 123mΩ High Power MOSFET FDMA2002NZ Dual N-Channel PowerTrench® MOSFET 30V, 2.9A, 123mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize in selling the new and unused, original factory sealed packing electronic components. specialize in IC...
Sunbeam Electronics (Hong Kong) Limited
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STP10NK80ZFP Integrated Circuit Chip N Channel MOSFET 800V 9A 40W Through Hole TO-220FP
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STP10NK80ZFP N-Channel MOSFET 800V 9A (Tc) 40W (Tc) Through Hole TO-220FP FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds......
Shenzhen Koben Electronics Co., Ltd.
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IRF530NPBF MOSFET Power Electronics High Power N Channel MOSFET Switching Applications
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...MOSFET Power Electronics High Power N Channel MOSFET Switching Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 17A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 90mOhm @ 9A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 37......
Shenzhen Sai Collie Technology Co., Ltd.
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MOS Single N Channel Mosfet Transistor IC 14 NC NTMFS4C05NT1G DFN5
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MOSFET Transistors NTMFS4C05NT1G MOS Single Transistors NTMFS4C05 DFN5 Product Description NTMFS4C05NT1G is Surface Mount N-Channel Transistors. The maximum gate charge at different Vgs is 14 nC @ 4.5 V, Current at 25°C - 11.9A continuous drain (Ta). ......
ShenZhen Mingjiada Electronics Co.,Ltd.
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FDMS3662 Mosfet Driver Circuit Using Transistor 100V N-Channel PowerTrench
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FDMS3662 Mosfet Power Transistor MOSFET 100V N-Channel PowerTrench Features Max rDS(on) = 14.8mΩ at VGS = 10V, ID = 8.9A Advanced Package and Silicon combination for low rDS(on) MSL1 robust package design 100% UIL Tested RoHS Compliant General Description......
ChongMing Group (HK) Int'l Co., Ltd
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NCP51560BBDWR2G Optoelectronics Components SOIC-16 Power Management ICs
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... output current capability. The NCP51560 is intended for fast switching to drive power MOSFETs and SiC MOSFET power switches. Short and matched propagation delays are also featured on the devices. The onsemi NCP51560 Isolated Dual-Channel Gate Driver has a...
Shenzhen Zhongkaixin Micro Electronics Co., Ltd.
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NCS20091MUTAG onsemi
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Here is a potential introduction for the ON Semiconductor NCS20091MUTAG P-channel MOSFET: NCS20091MUTAG The NCS20091MUTAG is a highly compact P-channel MOSFET from ON Semiconductor that provides up to 9A of continuous switching capability in an ultra-small......
ZhongHao Industry Limited
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