4H-N Type Semi-Insulating SiC Substrates 2inch 3inch 4inch Silicon Carbide Wafers
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...SiC Substrates 2inch 3inch 4inch Silicon Carbide Wafers 6inch Dia150mm 350um Thickness 4H N Type SiC Substrate For SBD For MOS Application 2inch Dia50mm 4H Semi SiC Substrate Research Grade Single Crystal 2inch dia50mm 330μm thickness 4H N-Type SiC substrate Production Grade 2inch Silicon Carbide Wafers 6H or 4H N-type or Semi-Insulating SiC Substrates 4H-N Type / Semi Insulating SiC Substrates 2inch 3inch......
SHANGHAI FAMOUS TRADE CO.,LTD
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8 Inch 200mm N Type Silicon Carbide Wafer Crystal Ingots SiC Substrate
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...SiC Wafers/8inch 200mm N-type SiC Crystal Wafers Ingots SiC substrate/2inch/3inch/4inch/6inch/8inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafers About Silicon Carbide (SiC)Crystal Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC...
SHANGHAI FAMOUS TRADE CO.,LTD
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6H Or 4H SiC Substrate, N Type Or Semi-Insulating -Powerway Wafer
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...6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiC substrate,Which is applied......
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
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4 inch 4H-SI SiC wafer manufacturer SiC substrate supplier
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...SiC wafer manufacturer SiC substrate supplier Homray Material Technology offers semiconductor silicon carbide wafers,4H-SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiC substrate......
Homray Material Technology
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4h-N Semi Silicon Carbide Wafer Sic Substrate Wafer for MOS Device
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... and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it...
Shenzhen A.N.G Technology Co., Ltd
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LED Substrate Grinding Wheels Metal Bonded Abrasives ISO14001
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...Substrate Application The grinding wheels for LED substrate are mainly used for back thinning of 2”, 4” and 6”LED epitaxial wafers. They can be used steadily on the Japanese, Korean and Taiwanese grinders with high performance. Workpiece: sapphire epitaxial wafer, SiC substrate epitaxial wafer, Si substrate epitaxial wafer. Material of workpiece: Synthetic sapphire, SiC......
China Abrasives Industry Hainan Corporation
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3inch 0.5mm thickness Cubic SGGG Substrate
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Product Description: The Angle Direction of our Single Crystal Substrates is fully Customized to ensure precise alignment and orientation during crystal growth. We offer two types of substrates: Cubic/Round, both with a 4inch diameter. Our substrates hav......
ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd.
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0.3mm Thick Metalized Ceramic Substrate Zirconia ZrO2 Diamond Polished
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... 0.3mm Thick Thin Film Zirconia ZrO2 Ceramic Substrate Specification of ceramic rods: 1. Raw material: Yttria stabilized zirconia, MgO stabilized zirconia, 95~99.5% alumina, Silicon carbide (SiC) 2. Forming method: Extruding, Dry pressed, Ceramic injection......
Jinghui Industry Limited
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Power Module Fourpack Topology A2F12M12W2-F1 SiC Power MOSFET IGBT Module Full Bridge
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...SiC Power MOSFET IGBT Module Full Bridge Description Of A2F12M12W2-F1 This A2F12M12W2-F1 is ACEPACK 2 power module in fourpack topology integrates advanced silicon carbide Power MOSFET technology. The module leverages the innovative properties of the wide-bandgap SiC material and a high-thermal-performance substrate......
ShenZhen Mingjiada Electronics Co.,Ltd.
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Giantplus 4.3inch GPN5043J2A6D LCD Panel
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...3inch GPN5043J2A6D LCD Panel Specification for GPN5043J2A6D: GPN5043J2A6D Basic Information Panel Model GPN5043J2A6D Panel Brand Giantplus Descrition a-Si TFT-LCD ,4.3 inch, 480×272 Panel Type a-Si TFT-LCD Operating Temperature -20 ~ 60 °C Storage Temperature -30 ~ 80 °C Remarks Full Cell; LC injection method; Substrate size: 550×670mm; 50 pcs panel / substrate......
Mega Source Elec.Limited
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