4inch SiC Epitaxial Wafer 4H-N Diameter 100mm Thickness 350μm Prime Grade
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4inch SiC epitaxial wafer 4H overview 4inch SiC Epitaxial Wafer 4H-N Diameter 100mm Thickness 350μm Prime Grade As a core material for silicon carbide (SiC) power device manufacturing, the 4-inch SiC epitaxial wafer is based on a 4H-N-type SiC wafer, ......
SHANGHAI FAMOUS TRADE CO.,LTD
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SiC Epitaxial Wafer Silicon Carbide 4H 4inch 6inch High Resistivity Semiconductor Industry
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SiC Epitaxial Wafer Silicon Carbide 4H 4inch 6inch High Resistivity Semiconductor Industry Description of SiC Epitaxial Wafer: Silicon carbide epitaxy is a compound semiconductor material composed of carbon and silicon elements (excluding doping factors). Silicon carbide (SiC) epitaxial......
SHANGHAI FAMOUS TRADE CO.,LTD
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GaN-on-SiC epi wafer supplier for RF application customized
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GaN-on-SiC epi wafer supplier for RF application customized Homray Material Technology provide high quality GaN-on-SiC epitaxial wafer for RF application. We supply 4inch and 6 inch GaN on SiC epi wafer with semi-insulating SiC substrate. SiN passivation ......
Homray Material Technology
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1500C CVD SIC Epitaxy Growth Furnace for Silicon Carbide Growth in 1000*1000*1500mm Effective Space
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... of the semiconductor epitaxial susceptor and etching ring. Epitaxial base, a high-purity graphite disk, with a circular groove on it to fix the wafer substrate.After placing them in the furnace, a layer of crystal film will grow on the surface of the...
Zhuzhou Ruideer Metallurgy Equipment Manufacturing Co.,Ltd
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4" Silicon Epitaxial Wafer Substrate Thickness 525 ± 25µm / Resistivity 0.002 - 0.003Ωcm , 2 Epitaxial Layers
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...Epitaxial Wafer Substrate Thickness 525 ± 25µm / Resistivity 0.002 - 0.003Ωcm , 2 Epitaxial Layers PAM-XIAMEN custom epitaxial or EPI wafer services on silicon wafers for research and development or mass production. PAM-XIAMEN processes single crystalline EPI layers on wafer diameters from 50mm to 150mm. Epitaxy is offered on bare wafers or those with buried layers, patterns or advanced device structures. For epitaxial......
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
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Silicon Back Grinding Wheels Sapphire Epitaxial Wafer For Simiconductor Field
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..., silicon wafer, gallium arsenide and GaN wafer. This kind of grinding wheel developed in out company can replace foreign products. They can be used steadily on the Japanese, Korean grinders with high performance. ......
SIGNI INDUSTRIAL (SHANGHAI) CO., LTD
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6A2 Back Grinding Wheel High Efficiency Custom Size Sapphire Epitaxial Wafer
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... selection of back grinding wheels. This particular grinding tool comes in two types: a silicon wafer back grinding wheel and an LED substrate back grinding wheel. Both of them can be used on different grinding machines made in Europe,America,Japan, and...
Zhengzhou Hongtuo Superabrasive Products Co., Ltd.
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High Purity Silicon Carbide Ceramics SiC Vertical Wafer Boat For Semiconductor Use
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Product Description: One of the key features of this product is its maximum temperature resistance of 1700℃. This makes it an ideal choice for applications that require high-temperature resistance, such as silicon carbide cooling air pipes, silicon carbide......
Wuxi Special Ceramic Electrical Co.,Ltd
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200mm 300mm Sapphire Wafer Single Side Polished Wafer
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... optical grade Kyropoulos grown sapphire crystals. high purity single crystal sapphire epitaxial substrate is suitable for direct epitaxial process, PSS process, ALN process and other epitaxial methods. It has the characteristics of uniform wavelength,...
Chongqing Silian Optoelectronic Science & Technology Co., Ltd.
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4inch Diameter 1mm SGGG Wafer Substituted Gadolinium Gallium Garnet
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4inch diameter 1mm thick GSGG Wafer Substituted Gadolinium Gallium Garnet (SGGG) is used as substrates for liquid epitaxy. The lattice parameter of our crystals is well controlled and the surface polish finishing is of the highest quality, allowing a perfect epitaxy......
ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd.
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