50W Gallium Nitride 28V DC to 4GHz High Electron Mobility GAN RF Power Transistor
|
...50W Gallium Nitride 28V DC-4GHz High Electron Mobility GAN RF Power Transistor Product Description Innotion’s YP01401650T is a 50-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 4000MHz. The transistor is supplied in a ceramic /metal flange package. Votage 28V Pout 50W......
Zhongshi Zhihui Technology (suzhou) Co., Ltd.
|
TGF2929-FL GaN IC 100W 28V DC–3.5 GHz GaN RF Power Transistor
|
TGF2929-FL GaN IC 100W 28V DC–3.5 GHz GaN RF Power Transistor [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% Low Price Guaranteed + Export to 108 countries, customer ......
ShenZhen Mingjiada Electronics Co.,Ltd.
|
6-8GHz 50W GaN RF Power Amplifier Module for FPV and Anti-Drone
|
6-8G 50W RF Power Amplifier Module 6000-8000MHZ For FPV Autel Dji Boost FPV Range And Signal Strength 6-8Ghz 50W anti drone module Interface Definition N.O. Interface Name Remark 1 Amplifier Switch Amplifier high level turns on, low level ......
Shenzhen Ladasky Technology Co.，Ltd
|
8oomhz 50w GaN RF Power Amplifier Drone Counter Module
|
Padi Fly main business includes UAV detector module, handheld detection, backpack detection, vehicle detection, UAV accessories, etc. Product Description Product Parameters Frequency and power can be customized! --We are experienced at anti drone module, ......
Padi Fly Technology Co., Ltd
|
HMC788ALP2ETR RF Power Transistor High Power Gain And Efficiency
|
... over the 0.5 to 2.7GHz frequency range with a maximum output power of 50W. The device offers an extremely wide instantaneous bandwidth, high efficiency, and excellent linearity performance. Features: • Power Gain of 27dB • Maximum Output Power of...
Shenzhen Sai Collie Technology Co., Ltd.
|
Airfast RF GaN Mosfet Power Transistor 1800 - 2200 MHz Working Frequency
|
Mosfet Power Transistor A3G20S250-01SR3 Airfast RF Power GaN Transistor, 1800-2200 MHz, 45 W Avg., 48 V This 45 W RF power GaN transistor is designed for cellular base station applications covering the frequency range of 1800 to 2200 MHz. This part is ......
Shenzhen Weitaixu Capacitor Co.,Ltd
|
2.4G 4G 50W 2300-2500MHz GaN RF Power Amplifier Drone Counter Module for Anti Drone System Mavic3 Fpv Djis Autel Anti Fpv with Isolation Protector
|
... 5, Adjustable GAN Voltage 6, GAN Voltage 7, Isolation Protector 1.RF Data Item Spec. Remarks Frequency Range(MHz) 2300-2500 Bandwidth Range±10MHz Working Voltage 28V 24-30V Analog sweeping speed 250KHz Output Power (Max) ≥47dBm 50W Gain (Max) 47......
JinYaTong Technology(china) Co., Ltd
|
RF Power Transistors MRW53601 NPN SILICON RF POWER TRANSISTOR MOTOROLA RF Power Transistors
|
MRW53601 is a NPN SILICON RF POWER TRANSISTOR. Part NO: MRW53601 Brand: MOTOROLA Date Code: 03+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products are ......
Mega Source Elec.Limited
|
DC to 4GHz 60W RF Power Transistor Gallium Nitride 28V Wide-Band High Power GaN Transistors
|
...
VBE Technology Shenzhen Co., Ltd.
|
RD06HVF1 RF Power Transistor 175MHz 6W Silicon Carbide Transistor For Amplifiers
|
... applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power amplifiers in VHF band mobile radio sets. List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND ...
Shenzhen Koben Electronics Co., Ltd.
|
Submit your “50w gan rf power transistor” inquiry in a minute :