FDS5690 60V Trench Power Mosfet Transistor , smd linear power mosfet
|
... Fast switching speed. • High performance trench technology for extremely low RDS(ON). • High power and current handling capability General Description This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that...
ChongMing Group (HK) Int'l Co., Ltd
|
High Power MOSFET RFP50N06 N-Channel Power MOSFET 60V 50A 22mΩ
|
High Power MOSFET RFP50N06 N-Channel Power MOSFET 60V 50A 22mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize in selling the new......
Sunbeam Electronics (Hong Kong) Limited
|
BSC016N06NSATMA1 MOSFET Power Electronics N-Channel OptiMOSTM Power-MOSFET 60V
|
..., 10V Rds On (Max) @ Id, Vgs 1.6mOhm @ 50A, 10V Vgs(th) (Max) @ Id 2.8V @ 95µA Gate Charge (Qg) (Max) @ Vgs 71 nC @ 10 V ......
Shenzhen Sai Collie Technology Co., Ltd.
|
JUYI original 60V 50A Dual N Channel Enhancement Mode Power MOSFET JY2605M for Motor Driver Solutions
|
...60V 50A Dual N Channel Enhancement Mode Power MOSFET JY2605M for Motor Driver Solutions GENERAL DESCRIPTION The product utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. FEATURES 60V...
Shanghai Juyi Electronic Technology Development Co., Ltd
|
Transistor 50N06 Mosfet FQP50N06 Mosfet Transistor TO-220 FQP50N06 N-Channel 60V 50A China made/Original
|
... (Qg) (Max) @ Vgs 41nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 1540pF @ 25V Power Dissipation (Max) 120W (Tc)...
Shenzhen Quanyuantong Electronics Co., Ltd.
|
High Frequency Adjustable DC Power Supply 60V 50A 3KW
|
60V 50A Adjustable Regulated DC Power Supply Introduction 60v 50A dc power supplies are commonly used for experiments and testing. They can be used to build circuit prototypes, test electronic components, and create simple electronic devices. They are also used in charging devices such as small battery chargers, phone chargers, and other low-power electronic devices. Our 60V 50A dc power......
Chengdu Xingtongli Power Supply Equipment Co., Ltd.
|
Single N-Channel Transistors NTMJS1D4N06CLTWG Power MOSFET 8-LFPAK Transistors
|
..., package is 8-LFPAK, Surface Mount. Specification Of NTMJS1D4N06CLTWG Part Number NTMJS1D4N06CLTWG Technology MOSFET (Metal Oxide) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.3mOhm @ 50A, 10V Vgs(th) (Max) @ Id 2V @ 280µA...
ShenZhen Mingjiada Electronics Co.,Ltd.
|
Practical Low Power Mosfet Transistors 20V 60V For Wireless Charging
|
... Resistance: Low Rds(ON) Material: Silicon Power Consumption: Low Power Loss Thermal Robustness Motor Driving Advanced Trench Technology Technical Parameters: Efficiency High Efficiency And Reliable Power Consumption Low Power Loss Resistance Low Rds(ON)...
Guangdong Lingxun Microelectronics Co., Ltd
|
1200v 50a High Power Mosfet Transistors / Thyristor CLA50E1200HB
|
...POWER MOSFET TRANSISTORS / THYRISTOR FOR LINE FREQUENCY 1200V 50A Goods Condition: Brand New Part Status: Active Lead Free / Rohs: Complaint Function: Circuit Control Mounting Type: Through Hole Package: TO247 High Light: n channel mosfet transistor , n channel transistor CLA50E1200HB High Efficiency Thyristor for for line frequency 1200V 50A......
Shenzhen Huahao Gaosheng Technology Co., Ltd
|
General Purpose Power Mosfet Transistor KSP2907A Equivalent PNP Amplifier
|
General Purpose Power Mosfet Transistor KSP2907A Equivalent PNP Amplifier Features • Collector-Emitter Voltage: VCEO= 60V • Collector Power Dissipation: PC (max)=625mW • Suffix “-C” means a Center Collector (1.Emitter 2.Collector 3.Base) • ......
Anterwell Technology Ltd.
|
Submit your “60v 50a power mosfet” inquiry in a minute :