8inch 12inch 4H-N Type SiC Wafer Thickness 500±25um 1000±50 N Doped Dummy Prime Research Grade
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8inch 12inch 4H-N type SiC Wafer thickness 500±25um n doped dummy prime research grade 8inch 12inch 4H-N type SiC Wafer's abstract This study presents the characterization of an 8-inch 12-inchH-N type silicon carbide (SiC) wafer intended for semiconductor applications. The wafer, with a thickness of 500±25 µm, was fabricated using state-of-the-art techniques and is doped with n-type......
SHANGHAI FAMOUS TRADE CO.,LTD
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4H N Type SiC Wafer Material , Dummy Grade , 10mm x 10m
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... generation semiconductor materialwith unique electrical properties and excellent thermal properties for high temperature and high power device application. SiC wafer can be supplied in diameter 2~6 inch, both 4H and 6H SiC , N-type , Nitrogen doped , and...
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
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Custom Conductive Type SiC Wafer For High Temperature High Voltage Power Device Solar Photovoltaic
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...4H-N sic wafers dummy Prime Production grade for SBD MOS Device,4H-N 4inch 6inch Sic Wafers Semiconductor High Crystal Quality For Demanding Power Electronics, 4H-N 8inch TANKBLUE Brand Semiconductor Substrate SIC Silicon Carbide Wafer For Solar Photovoltaic, 8inch Silicon Carbide Substrate Production Grade N Type 4H SiC Wafer For Research And Experiment, Custom 8inch 4H SiC wafer conductive type......
SHANGHAI FAMOUS TRADE CO.,LTD
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