AD8361ARMZ-REEL7 Rf Power Amplifier Transistor
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...: Reel Number of Transistors: 7 Configuration: Single-Ended Power Output: +28dBm Gain: 16dB Operating Frequency: 0.05-6GHz Input/Output Impedance: 50Ω Operating Voltage: 5V ......
Shenzhen Sai Collie Technology Co., Ltd.
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High Efficiency Electron Mobility 12W 28V DC-8.5GHz GaN RF Power Amplifier Transistor Integrated Chip
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...RF Power Amplifier Transistor Integrated Chip Innotion's YP801241T is a 12-watt, pre-matched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 8500MHz. The transistor......
Zhongshi Zhihui Technology (suzhou) Co., Ltd.
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Excellent Theramal Stability Rf Power Amplifier Transistor LDMOS FET 28V HF to 2.7GHz
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Excellent Theramal Stability Rf Power Amplifier Transistor LDMOS FET 28V HF to 2.7GHz...
VBE Technology Shenzhen Co., Ltd.
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Ultra band 1000-2000MHz 47dBm Gain RF power amplifier Module for anti drone system
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.... With support for multiple frequency bands over 1000MHz bandwidth. Equipped with high power transistors circuits, this amplifier is capable of delivering a maximum output power of 50W, ensuring strong and reliable signal amplification for your projects....
Amplifier module
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RF Power Transistors MHW903 - Motorola, Inc - 3.5 W 890 to 915 MHz RF POWER AMPLIFIERS
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Quick Detail: MHW903 - Motorola, Inc - 3.5 W 890 to 915 MHz RF POWER AMPLIFIERS Description: . . . designed specifically for the Pan European digital 2.0 watt, GSM hand–held radio. The MHW903, MHW953 and MHW954 are capable of wide power range control, ......
Mega Source Elec.Limited
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NPN SILICON rf power mosfet transistors for RF power amplifiers on VHF band Mobile radio , 2SC1972
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NPN SILICON rf power mosfet transistors for RF power amplifiers on VHF band Mobile radio , 2SC1972 DESCRIPTION: The ASI 2SC1972 is Designed for RF power amplifiers on VHF band mobile radio applications. FEATURES INCLUDE: • Replaces Original 2SC1972 in ......
Anterwell Technology Ltd.
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1.2GHz 30W GaN Transistors Anti Drone Module RF Power Amplifier Module for Drone Defense
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... and customizable frequency/power options. Key Features Customizable frequency range: 300MHz - 6GHz Power output customization: 5W - 200W Advanced GaN transistor technology for enhanced efficiency Compact design for easy integration into anti-drone systems...
Chongqing Miao Yi Tang Technology Co., Ltd.
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2SC1971 C1971 TO220 Epitaxial Planar NPN Transistor For RF Power Amplifiers
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2SC1971 C1971 TO220 NPN epitaxial planar type transistor designed for RF power amplifiers Description: silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio applications. List Of Other Electronic Components......
Shenzhen Koben Electronics Co., Ltd.
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2sc2782 Transistor Amplifier NPN Transistor C2782 NPN RF VHF Amplifier Transistor Band Power
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2SC2782 N/A Electronic Components IC MCU Microcontroller Integrated Circuits 2SC2782 #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width:......
Shenzhen Kaigeng Technology Co., Ltd.
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Low noise figure RF transistor Infineon BFP196E6327HTSA1 designed for DECT PCN power amplifiers and broadband
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...BFP196 is a low-noise silicon bipolar RF transistor designed for low-noise, low-distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz. It is also suitable as a power amplifier for DECT and PCN systems. Key features include......
Hefei Purple Horn E-Commerce Co., Ltd.
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