BUF420AW Bipolar BJT NPN Diode Transistor 450 V 30 A 200 W Through Hole TO-247-3
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...LOT SPREAD FOR RELIABLE OPERATION ●LOW BASE-DRIVE REQUIREMENTS Description: The BUF420AW is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capacity. It uses a ......
Shenzhen Zhaocun Electronics Co., Ltd.
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