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Circuit Protection Power Mos Transistor

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circuit protection power mos transistor

from 1176 Products

Circuit Protection Power Mos Transistor Chip IPD060N03LGATMA1

China Circuit Protection Power Mos Transistor Chip  IPD060N03LGATMA1 on sale
...Transistor Chip Discrete Semiconductors Circuit protection IPD060N03LGATMA1 Product range OptiMOSª3 Power-Transistor,MOSFET N-CH 30V 50A TO-252 Basic data Product Attribute Attribute Value Manufacturer: Infineon Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: TO-252-3 Transistor......
KZ TECHNOLOGY (HONGKONG) LIMITED

Address: RM4,16/F HO KING COMM CRT 2-16 FAYUEN ST MONGKOKKL

RF Power Transistors BLF248 VHF push-pull power MOS transistor

China RF Power Transistors BLF248   VHF push-pull power MOS transistor on sale
... range.The transistor is encapsulated in a 4-lead SOT262 A1 balanced flange envelope, with two ceramic caps. The mounting flange provides the common source connection for the transistors. Applications: • High power gain • Easy power control •...
Mega Source Elec.Limited

Address: R-62852 Golconda Electronic Market ,Zhenhua Road ,Futian District .SZ.CN.518031

High Power Mos Transistor IC Chip FDPC5018SG Electronic Parts

China High Power Mos Transistor IC Chip FDPC5018SG Electronic Parts on sale
FDPC5018SG Electronic part MOS transformer Bom service Original high power mosfet transistor #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#......
Shenzhen Res Electronics Limited

Address: B615, Niulanqian Building, Minzhi Avenue, Longhua District, Shenzhen City, Guangdong Province, China

SGT75T65SDM1P7 TO-247 Inverter High Frequency IGBT Tube Electronic Component High Power MOS Transistor

China SGT75T65SDM1P7 TO-247 Inverter High Frequency IGBT Tube Electronic Component High Power MOS Transistor on sale
#detail_decorate_root .magic-0{margin-bottom:10px;overflow:hidden}#detail_decorate_root .magic-1{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width:2px;padding-top:8px......
Shenzhen Anxinruo Technology Co., Ltd.

Address: Room 3-1211A, No. 8760 Bao'an Avenue, Hongxing Community, Songgang Street, Bao'an District, Shenzhen City

CSD25402Q3A 650 MV Power Mosfet Driver Circuit , High Power Mosfet Transistors

China CSD25402Q3A 650 MV Power Mosfet Driver Circuit , High Power Mosfet Transistors on sale
...Power Transistor MOSFET P-CH Pwr MOSFET 1 Features Ultra-Low Qg and Qgd Low Thermal Resistance Low RDS(on) Pb and Halogen Free RoHS Compliant SON 3.3 mm × 3.3 mm Plastic Package ​2 Applications DC-DC Converters Battery Management Load Switch Battery Protection 3 Description This –20-V, 7.7-mΩ NexFETTM power MOSFET is designed to minimize losses in power......
ChongMing Group (HK) Int'l Co., Ltd

Address: Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN

TPC8020-H Field Effect Power Mosfet Transistor Silicon N Channel MOS Type silicon circuit board

China TPC8020-H Field Effect Power Mosfet Transistor Silicon N Channel MOS Type silicon circuit board on sale
...-H Field Effect Transistor Silicon N Channel MOS Type silicon circuit board · Small footprint due to small and thin package · High-speed switching · Small gate charge: Qg = 23 nC (typ.) · Low drain-source ON resistance: RDS (ON) = 6.8 mO (typ.) · High......
Anterwell Technology Ltd.

Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China

Fast Switching Time Mos Field Effect Transistor , Power Switch Transistor

China Fast Switching Time Mos Field Effect Transistor , Power Switch Transistor on sale
..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 A (Vgs= 10V) - 8 A (Vgs= -10V) 12.9 mΩ...
Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Address: Room 2013,DingCheng International Building, ZhenHua Road, FuTian District, ShenZhen, GuangDong Province

Fast Switching Time Mos Field Effect Transistor , Power Switch Transistor

China Fast Switching Time Mos Field Effect Transistor , Power Switch Transistor on sale
..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 A (Vgs= 10V) - 8 A (Vgs= -10V) 12.9 mΩ...
Beijing Silk Road Enterprise Management Services Co.,LTD

MOSFET Transistors N Channel MOS Transistor Integrated Circuit Chips IMBG65R039M1HXTMA1

China MOSFET Transistors N Channel MOS Transistor Integrated Circuit Chips IMBG65R039M1HXTMA1 on sale
Transistor N Channel MOS Transistor IMBG65R039M1HXTMA1 New Parts MOSFET Transistors Product Description Commutation robust fast body diode Reduced system cost and complexity Higher robustness and system reliability Product Specifications Part Number ......
Shenzhen Tengshengda ELECTRIC CO., LTD.

Address: 609 No. 4018, baoan Road, Xixiang Street, Baoan District, Shenzhen, Guangdong

Transistor 2SK1489 1489 Power MOS FET TO-3P MOS Field Effect Transistor Electronic Components Integrated Circuits

China Transistor 2SK1489 1489 Power MOS FET TO-3P MOS Field Effect Transistor Electronic Components Integrated Circuits on sale
High power NPN epitaxial planar transistor 2SD669A Product Description Model Number 2SD669A Package TO-3P Date Code 18+ Packing Tape and reel/ Tube Stock Enough Stock Supplier Quanyuantong Electronics Co.,ltd Lead time 48hours Quality Warranty 360 days ......
Shenzhen Quanyuantong Electronics Co., Ltd.

Address: Rm18 B, Block A, Duhui100 Zhonghang Road ,Futian District,Shenzhen China

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