Circuit Protection Power Mos Transistor Chip IPD060N03LGATMA1
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...Transistor Chip Discrete Semiconductors Circuit protection IPD060N03LGATMA1 Product range OptiMOSª3 Power-Transistor,MOSFET N-CH 30V 50A TO-252 Basic data Product Attribute Attribute Value Manufacturer: Infineon Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: TO-252-3 Transistor......
KZ TECHNOLOGY (HONGKONG) LIMITED
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RF Power Transistors BLF248 VHF push-pull power MOS transistor
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... range.The transistor is encapsulated in a 4-lead SOT262 A1 balanced flange envelope, with two ceramic caps. The mounting flange provides the common source connection for the transistors. Applications: • High power gain • Easy power control •...
Mega Source Elec.Limited
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High Power Mos Transistor IC Chip FDPC5018SG Electronic Parts
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FDPC5018SG Electronic part MOS transformer Bom service Original high power mosfet transistor #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#......
Shenzhen Res Electronics Limited
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SGT75T65SDM1P7 TO-247 Inverter High Frequency IGBT Tube Electronic Component High Power MOS Transistor
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Shenzhen Anxinruo Technology Co., Ltd.
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CSD25402Q3A 650 MV Power Mosfet Driver Circuit , High Power Mosfet Transistors
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...Power Transistor MOSFET P-CH Pwr MOSFET 1 Features Ultra-Low Qg and Qgd Low Thermal Resistance Low RDS(on) Pb and Halogen Free RoHS Compliant SON 3.3 mm × 3.3 mm Plastic Package 2 Applications DC-DC Converters Battery Management Load Switch Battery Protection 3 Description This –20-V, 7.7-mΩ NexFETTM power MOSFET is designed to minimize losses in power......
ChongMing Group (HK) Int'l Co., Ltd
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TPC8020-H Field Effect Power Mosfet Transistor Silicon N Channel MOS Type silicon circuit board
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...-H Field Effect Transistor Silicon N Channel MOS Type silicon circuit board · Small footprint due to small and thin package · High-speed switching · Small gate charge: Qg = 23 nC (typ.) · Low drain-source ON resistance: RDS (ON) = 6.8 mO (typ.) · High......
Anterwell Technology Ltd.
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Fast Switching Time Mos Field Effect Transistor , Power Switch Transistor
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..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 A (Vgs= 10V) - 8 A (Vgs= -10V) 12.9 mΩ...
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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Fast Switching Time Mos Field Effect Transistor , Power Switch Transistor
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..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 A (Vgs= 10V) - 8 A (Vgs= -10V) 12.9 mΩ...
Beijing Silk Road Enterprise Management Services Co.,LTD
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MOSFET Transistors N Channel MOS Transistor Integrated Circuit Chips IMBG65R039M1HXTMA1
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Transistor N Channel MOS Transistor IMBG65R039M1HXTMA1 New Parts MOSFET Transistors Product Description Commutation robust fast body diode Reduced system cost and complexity Higher robustness and system reliability Product Specifications Part Number ......
Shenzhen Tengshengda ELECTRIC CO., LTD.
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Transistor 2SK1489 1489 Power MOS FET TO-3P MOS Field Effect Transistor Electronic Components Integrated Circuits
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High power NPN epitaxial planar transistor 2SD669A Product Description Model Number 2SD669A Package TO-3P Date Code 18+ Packing Tape and reel/ Tube Stock Enough Stock Supplier Quanyuantong Electronics Co.,ltd Lead time 48hours Quality Warranty 360 days ......
Shenzhen Quanyuantong Electronics Co., Ltd.
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