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Emitter Module Ionizer Module

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emitter module ionizer module

from 1504 Products

Customizable Multi Pin Ion Emitter Module Ionizer Module With Built In Lamp

China Customizable Multi Pin Ion Emitter Module Ionizer Module With Built In Lamp on sale
...Ion Emitter Module with Built - in Lamp Product Overview Our Customizable Multi - Pin Ion Emitter Module with Built - in Lamp is designed to provide versatile and efficient ion - generating solutions for a wide range of applications. This module combines......
Xiamen Airnasa Electronics Co., Ltd.

Address: 23-3-303, Xiangyue Road, Ind. Zone, Torch High-Tech Zone, Xiamen, Fujian, China

1200V 900A IGBT Modules Single Si FZ900R12KE4HOSA1 SP000524466

China 1200V 900A IGBT Modules Single Si FZ900R12KE4HOSA1 SP000524466 on sale
...module 1200V 900A FZ900R12KE4 Manufacturer: Infineon Product Type: IGBT Modules Configuration: Single Collector-emitter maximum voltage VCEO: 1.2 kV Collector-emitter saturation voltage: 1.75 V Continuous collector current at 25 C: 900 A Gate-emitter leakage current: 400 nA Pd-power dissipation: 4300 W Minimum working temperature: - 40 C Maximum working temperature: + 150 C Package: Tray Gate/emitter...
Eastern Stor International Ltd.

Address: Room 4513, Block C, CEIEC Building, Huaqiang North Rd, Futian District, Shenzhen, Guangdong, China 518031

CM450DY-24S 205G IGBT MODULE - TOP ROW 42 IGBT Modules IGBT MODULES-SERIES DUAL

China CM450DY-24S 205G IGBT MODULE - TOP ROW 42 IGBT Modules IGBT MODULES-SERIES DUAL on sale
...Modules IGBT MODULES-SERIES DUAL Manufacturer: Mitsubishi Electric Product Category: IGBT Modules RoHS: Details Product: IGBT Silicon Modules Configuration: Dual Collector- Emitter Voltage VCEO Max: 1.2 kV Collector-Emitter Saturation Voltage: 1.8 V Continuous Collector Current at 25 C: 450 A Gate-Emitter......
Wisdtech Technology Co.,Limited

Address: Room 1205-1207, Nanguang building, Huafu Road, Futian District, Shenzhen, Guangdong, China

FF300R12ME4 Automotive IGBT Modules 1200V 300A Half Bridge Dual IGBT Module

China FF300R12ME4 Automotive IGBT Modules 1200V 300A Half Bridge Dual IGBT Module on sale
... and fast TRENCHSTOP™ IGBT4, Emitter Controlled HE diode and NTC. Specification Of FF300R12ME4 Part Number: FF300R12ME4 Product: IGBT Modules Configuration: Dual Collector- Emitter Voltage VCEO Max: 1.2 kV Collector-Emitter Saturation Voltage: 1.75 V...
ShenZhen Mingjiada Electronics Co.,Ltd.

Address: 1239 New Asia Guoli Building Zhenzhong Road.,Futian district Shenzhen China

Sixpack IGBT Module With IGBT 4 Emitter Controlled 4 Diode FS50R12W2T4

China Sixpack IGBT Module With IGBT 4 Emitter Controlled 4 Diode FS50R12W2T4 on sale
FS50R12W2T4 EasyPACK™ 2B 1200V 50A sixpack IGBT module with TRENCHSTOP™ IGBT4 Emitter Controlled 4 diode EasyPACK™ 2B 1200 V, 50 A sixpack IGBT module with TRENCHSTOP™ IGBT4, Emitter Controlled 4 diode and NTC. Also available as variation with ......
Shenzhen Hongxinwei Technology Co., Ltd

Address: 3418, Duhuixuan, Shennan Avenue, Futian District, Shenzhen, Guangdong Province, China

FF300R12KE4 High Power Igbt Module

China FF300R12KE4 High Power Igbt Module on sale
...Module N-CH 1200V 460A IGBT Inverter IGBT Modules Applications Motor control and drives Uninterruptible Power Supplies (UPS) Specifications Product Attribute Attribute Value Manufacturer: Infineon Product Category: IGBT Modules Product: IGBT Silicon Modules Configuration: Dual Collector- Emitter Voltage VCEO Max: 1200 V Collector-Emitter......
Shenzhen Retechip Electronics Co., Ltd

Address: Room L, 23rd Floor, Building B, Duhui 100, Zhonghang Rd, Futian District, Shenzhen City, Guangdong

1200V Inverter Dual IGBT Half Bridge Module FF200R12KT4 Power Drive 62mm C-Series

China 1200V Inverter Dual IGBT Half Bridge Module FF200R12KT4 Power Drive 62mm C-Series on sale
...modules FF200R12KT4 power drive module Maximum Rated Values Collector-emitter voltage Tvj = 25°C VCES 1200 V Continuous DC collector current TC = 100°C, Tvj max = 175°C TC = 25°C, Tvj max = 175°C IC nom IC 200 320 A A Repetitive peak collector current tP = 1 ms ICRM 400 A Total power dissipation TC = 25°C, Tvj max = 175°C Ptot 1100 W Gate-emitter......
OUTER ELECTRONIC TECHNOLOGY (HK) LIMITED

Address: 27P , Block B , Duhui 100 , Zhonghang Road , Futian District , Shenzhen , China

1200V 600A Power IGBT Module SKM600GA12E4 SKM600GA12T4

China 1200V 600A Power IGBT Module SKM600GA12E4 SKM600GA12T4 on sale
Product Detail Transistor Polarity: NPN DC Collector Current: 913A Collector Emitter Saturation Voltage Vce(on): 1.8V Collector Emitter Voltage V(br)ceo:1.2kV Transistor Case Style: Module Operating Temperature Max:125°C Product Information 1. Stock,Order ......
Shenzhen Quanyuantong Electronics Co., Ltd.

Address: Rm18 B, Block A, Duhui100 Zhonghang Road ,Futian District,Shenzhen China

TO-247HV IGBT Transistor Module IXYH30N450HV 4500 V 60 A 430 W Through Hole

China TO-247HV IGBT Transistor Module IXYH30N450HV 4500 V 60 A 430 W Through Hole on sale
IXYH30N450HV IGBT PT 4500 V 60 A 430 W Through Hole TO-247HV IXYS IXYT30N450HV & IXYH30N450HV XPT™ IGBTs IXYS IXYT30N450HV and IXYH30N450HV High-Voltage XPT™ IGBTs feature a 4.5kV maximum collector-emitter voltage and a 3.9V maximum collector-emitter ......
HongKong Wei Ya Hua Electronic Technology Co.,Limited

Address: Room 3001-2, Tower A, World Trade Plaza, No. 9 Fuhong Road, Futian District, Shenzhen

Ionpure LX-Z IP-LXM10Z-5 CEDI Module for Pharma Power Plants

China Ionpure LX-Z IP-LXM10Z-5 CEDI Module for Pharma Power Plants on sale
...module delivers ultra-pure water through continuous electrodeionization, eliminating chemical regeneration. Designed for critical industrial applications, it produces water quality surpassing mixed-bed ion exchange while removing ionized and weakly ......
Wuxi Fenigal Science & Technology Co., Ltd.

Address: 606#, Building-B, 100 Dicui Road, Binhu District, Wuxi, Jiangsu, China

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