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Epi Ready 4inch Inp Wafers

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epi ready 4inch inp wafers

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Epi Ready 4inch InP Wafers N Type P Type EPF＜1000cm^2 With The Thickness Of 325um±50um

China Epi Ready 4inch InP Wafers N Type P Type EPF＜1000cm^2 With The Thickness Of 325um±50um on sale
... innovation. Crafted from pristine indium phosphide, a binary semiconductor renowned for its superior electron velocity, our wafer offers unparalleled performance in optoelectronic applications, rapid transistors, and resonance tunneling diodes....
SHANGHAI FAMOUS TRADE CO.,LTD

Address: Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799

P Type , VGF InP Wafer With CMP Polished , 2”, Prime Grade , Epi Ready

China P Type , VGF InP Wafer With CMP Polished , 2”, Prime Grade , Epi Ready on sale
...InP Wafer With CMP Polished , 2”, Prime Grade , Epi Ready PAM-XIAMEN provides single crystal InP(Indium phosphide) wafer for micro-electronic ( HBT/ HEMT ) and opto-electronic industry ( LED / DWDM / PIN / VCSELs ) in diameter up to 6 inch. Indium phosphide ( InP ) crystal is formed by two elements , Indium and Phosphide , growth by Liquid Encapsulated Czochralski ( LEC ) method or VGF method . InP wafer......
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

Address: #506B, Henghui Business Center, No.77, Lingxia Nan Road, High Technology Zone, Huli, Xiamen 361006, China

4 Inch Semi-Insulating Indium Phosphide InP Wafer For LD Laser Diode

China 4 Inch Semi-Insulating Indium Phosphide InP Wafer For LD Laser Diode on sale
4inch Semi-Insulating Indium Phosphide InP Wafer for LD Laser Diode,semiconductor wafer,3inch InP wafer,single crystal wafer​2inch 3inch 4inch InP substrates for LD application, semiconductor wafer,InP wafer,single crystal wafer InP introduce InP single ......
SHANGHAI FAMOUS TRADE CO.,LTD

Address: Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799

4inch 0.5mm Sapphire Crystal Wafer Single Crystal C-Axis Epi-Ready

China 4inch 0.5mm Sapphire Crystal Wafer Single Crystal C-Axis Epi-Ready on sale
Horizontally Directed Crystallization Grown Sapphire Wafer 4inch 0.5mm C-Axis Epi-Ready Single crystal sapphire Al2O3 possesses a unique combination of excellent optical, physical and chemical properties. The hardest of the oxide crystals, sapphire Al2O3 ......
Hangzhou Freqcontrol Electronic Technology Ltd.

Address: Room 1106, CIBC, No.198 Wuxing Rd, Hangzhou, P.R.China

Dia 3 Inch 4 Inch Technical Ceramic Parts InP Based Epi Wafer

China Dia 3 Inch 4 Inch Technical Ceramic Parts InP Based Epi Wafer on sale
InP Based Epi Wafer We provides MBE / MOCVD epitaxial growth of custom structure on InP substrate for microelectronics , optoelectronics and RF Microwave applications , in diameter Ø 2" to Ø 4” . With our extensive MOCVD experience , we can grow binary alloy ( InP ) or ternary alloy ( InGaAs , InAlAs , InGaAsP ) on InP......
HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD

Address: No. 26, Dongqing Street, High-tech Zone, Zhengzhou ,Henan, China

4 inch GaN-on-Si epi wafer manufacturer for Power HEMT

China 4 inch GaN-on-Si epi wafer manufacturer for Power HEMT on sale
... on a Silicon (111) substrate for power & RF applications.Each layer can be customized. The benifits of using GaN epi wafers: 5G-related RF devices, such as power amplifier High-efficiency power electronics devices, such as power supplies, DC/DC ......
Homray Material Technology

Address: 苏州吴中区苏蠡路
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