On Diamond Gallium Nitride Wafer Epitaxial HEMT And Bonding
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customzied size MPCVD method GaN&Diamond Heat Sink wafers for Thermal management area According to statistics, the temperature of the working junction will drop Low 10 ° C can double the device life. The thermal conductivity of diamond is 3 to 3 higher tha......
SHANGHAI FAMOUS TRADE CO.,LTD
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4" Gallium Nitride Wafer
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...width (light emitting and absorption) cover the ultraviolet, visible light and infrared. Product Aluminum nitride (AlN) film Product Description: AllN Epitxial proposed model saphhire hydride vapor phase epitaxy (HVPE) method. Aluminum nitride film is also...
SHANGHAI FAMOUS TRADE CO.,LTD
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2 Inch Si-Doped GaN Epitaxial Materials On Sapphire For Gallium Nitride Devices
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...Epitaxial Materials On Sapphire For Gallium Nitride Devices PAM-XIAMEN’s Template Products consist of crystalline layers of gallium nitride (GaN), aluminum nitride (AlN),aluminum gallium nitride (AlGaN)and indium gallium nitride (InGaN), which are deposited on sapphire substrates. PAM-XIAMEN’s Template Products enable 20-50% shorter epitaxy cycle times and higher quality epitaxial......
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
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7W Gallium Nitride RF Power Transistor with Wide Bandwidth DC to 7.2GHz
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... 28V Gallium Nitride RF Power Transistor YP601238T with High Efficiency Gain and Wide Bandwidth DC to 7.2GHz Product Description Innotion’s YP601238T is a 7-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed ......
Zhongshi Zhihui Technology (suzhou) Co., Ltd.
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Gallium Nitride On Sapphire Semiconductor GaN 100mm
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Gallium Nitride on Sapphire Wafers (GaN) We grow are sapphire wafers using several methods Czrochroski (CZ) process is known to be more efficient for c-axis sapphire substrate production. Heat Exchanger Method (HEM) - ......
Chongqing Silian Optoelectronic Science & Technology Co., Ltd.
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Fiber Isolator YIG Film GSGG Wafer Single Crystal Substrates
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...Wafer Gadolinium gallium garnet(GGG) is a special substrate magneto optical flims.substituted iron garnet epitaxial films, which is good material for YIG,and BIG flim. Substituted Gadolinium Gallium Garnet (SGGG) is used as substrates for liquid epitaxy. The lattice parameter of our crystals is well controlled and the surface polish finishing is of the highest quality, allowing a perfect epitaxy......
ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd.
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SI type SiC ingot manufacturer sell semi-insulating sic wafer
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...wafer HMT as the leading supplier and manufacturer of SiC ingot, our SiC crystal ingot have 4 inch and 6 inch with N type and SI type. Quality SiC Substrate Supplier & Manufacture in China, Contact Now! Quality Assurance. Semi-insulating silicon carbide substrates are mainly used in gallium nitride rf devices. By growing gan epitaxy......
Homray Material Technology
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Silicon Back Grinding Wheels Sapphire Epitaxial Wafer For Simiconductor Field
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..., silicon wafer, gallium arsenide and GaN wafer. This kind of grinding wheel developed in out company can replace foreign products. They can be used steadily on the Japanese, Korean grinders with high performance. ......
SIGNI INDUSTRIAL (SHANGHAI) CO., LTD
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3 Inch 625um Technical Ceramic Parts GaSb Wafer Gallium Antimonide
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...wafer ( Gallium Antimonide ) We provides GaSb wafer ( Gallium Antimonide ) to optoelectronics industry in diameter up to 2 inch . GaSb crystal is a compound formed by 6N pure Ga and Sb element and is grown by Liquid Encapsulated Czochralski ( LEC ) method with EPD < 1000 cm -3 . GaSb crystal has high uniformity of electrical parameters and low defect density , suitable for MBE or MOCVD epitaxial......
HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD
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