HXY3404 Mos Field Effect Transistor SOT-23 Plastic Encapsulated
|
SOT-23 Plastic-Encapsulate MOSFETS HXY3404 N-Channel Enhancement Mode Field Effect Transistor Product Summary ID= 6.0 A VDSS=20v RDS(on) <32 mΩ VGS =4.5V RDS(on) <40 mΩ VGS =2.5V FEATURE TrenchFET ......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
|
SMD MOS Field Effect Transistor SOT-23 LP3407LT1G RoHS
|
... Body Model: > 4000 V− Machine Model: > 400 V 3. Moisture Sensitivity Level: 1 4. MOS (Field Effect Transistor) / LP3407LT1G Diodes and Rectifiers P channel 30V 4.1A Customer Service: 1. Do you support BOM lists? Of course, we have a professional team to...
SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD
|
MMBF5484 Field Effect Transistor Transistors FETs MOSFETs RF Chip
|
...Active Transistor Type N-Channel JFET Frequency 400MHz Gain - Voltage - Test 15V Current Rating 5mA Noise Figure 4dB Current - Test - Power - Output - Voltage - Rated 25V Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 Shipment......
KZ TECHNOLOGY (HONGKONG) LIMITED
|
2N7002 Field Effect Transistor N Channel Transistor Plastic Encapsulate MOSFETS
|
Electronic Components A1SHB Transistor 2301 -20V -2.8A SOT-23 P-Channel Product Description The MX2301A uses advanced trench technology to provide excellent RDS, low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for ......
Shenzhen Canyi Technology Co., Ltd.
|
Integrated Circuits IC CJL2019 SOT-23 N-channel 5A20V Field Effect Transistor CJ/Changjing Original
|
Integrated Circuits IC Original and New,CJL2019 SOT-23 N-channel 5A20V Field Effect Transistor CJ/Changjing Original [Who we are?] Shenzhen QINGFENGYUAN Technology Co., Ltd established in 2013, is a leading distributor of electronic components, including ......
ShenZhen QingFengYuan Technology Co.,Ltd.
|
NDS352AP MOSFET Power Electronics SOT-23-3 Package P-Channel Logic Level Enhancement Mode Field Effect Transistor
|
NDS352AP MOSFET Power Electronics SOT-23-3 Package P-Channel Logic Level Enhancement Mode Field Effect Transistor FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (......
Shenzhen Sai Collie Technology Co., Ltd.
|
NDT456P Power Mosfet Transistor P-Channel Field Effect Transistor
|
NDT456P P-Channel Enhancement Mode Field Effect Transistor General Description Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density ......
Anterwell Technology Ltd.
|
2N7002A-7 Programmable IC Chips N Channel Enhancement Mode Field Effect Transistor
|
...FIELD EFFECT TRANSISTOR Features • N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Small Surface Mount Package • ESD Protected Gate, 1.2kV HBM • Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 2 and 4) • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • Case: SOT-23......
ChongMing Group (HK) Int'l Co., Ltd
|
Fast Switching Time Mos Field Effect Transistor , Power Switch Transistor
|
..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 A (Vgs= 10V) - 8 A (Vgs= -10V) 12.9 mΩ...
Beijing Silk Road Enterprise Management Services Co.,LTD
|
CJ Electronic Diodes And Transistors , S8550 Datasheet Transistor SOT-23
|
S8550 CJ Electronic Diodes And Transistors SOT-23...
Sunbeam Electronics (Hong Kong) Limited
|
Submit your “field effect transistor sot 23” inquiry in a minute :