2 Inch Free Standing U-GaN Bulk GaN Substrates,Epi-Ready Grade For GaN Laser Diode
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...ch is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,Our GaN substrate has low defect density and less or free macro defect density. PAM-XIAMEN offers full range of GaN and Related III-N Materials including GaN substrates of...
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
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785nm to 980nm Diode Laser Chips and Bars
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...Laser Chips and Bars High electrical-optical conversion efficiency >20000 hours lifetime Customized products available Short lead time Quick response Part number Wavelength Structure Operation Power Operation current/voltage STL-UMC-190-915-TE-18-4.0 915nm Single chip CW 18W 19.5A/1.8V STL-UMC-95-915-TE-10-4.0 915nm Single chip CW 10W 11A/1.7V STL-UMC-28-915-TE-0.5-0.5 915nm Single chip......
Wuhan Sintec Optronics Co., Ltd,
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ADM Macro Laser Diode Stack Adopt The Original Jenoptik Laser Chips
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... wavelength 810nm 755nm 1064nm for hair removal applications . We are providing the diode laser stacks in 400W 500w 600W 800w 1000w for hair removal beauty equipment , meanwhile , the diode laser repairing service and replacement is also one of our...
Beijing ADM Beauty Laser CO.,LTD.
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Wedge Single Mode Lensed Fiber designed for laser chip coupling
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Wedge Single Mode Lensed Fiber Designed For Laser Chip Coupling Wedge Lensed optical Fiber Wedge-lensed optical fiber are designed for laser chip coupling With precision process we can wedge lensed tip at the end of optical Fiber...
Shenzhen OptoElectronics Co., Ltd.
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12 Inch 5nm Semiconductor Wafer Chip Wafer Scrap Laser Chip
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This is a subsidiary of our group for wafer and chip projects (uncut material, defective brand, finished product), and usable wafers can be removed for uncut material and defective products. Market uses are as follows: 5nm wafer 5NANO technology wafer ......
Shenzhen Chuangying Times Technology Co., Ltd.
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Laser Diode Stacks 10 12 16bars Diode Laser Chip for Hair Removal Handle
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Specification Output Wavelength:808/1064/755/940 Optional nm Wavelength:±15 nm Bar quantity :10 12 16 Pcs Peak Power:1000 1200 1600 W Bar interval:2.95 2.95 2.15 m Light size:10*26.7 10*32.6 10*32.4 mm X mm Angel of divergence:Fast≤31°；slow≤8° Wavelength:......
XINLAND LASER CO.,LTD
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Laser Projection Display Gallium Nitride GaN Wafer 350um Thickness
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... band width (light emitting and absorption) cover the ultraviolet, visible light and infrared. GaN can be used in many areas such as LED display, High-energy Detection and Imaging, Laser Projection Display, Power Device, etc. Specifications: Item GaN-FS-N...
SHANGHAI FAMOUS TRADE CO.,LTD
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III - Nitride 2 INCH Free Standing GaN Wafer For Laser Projection Display Power Device
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2inch GaN substrates template,GaN wafer for LeD,semiconducting Gallium Nitride Wafer for ld,GaN template, mocvd GaN Wafer,Free-standing GaN Substrates by Customized size,small size GaN wafer for LED, mocvd Gallium Nitride wafer 10x10mm,5x5mm, 10x5mm GaN ......
SHANGHAI FAMOUS TRADE CO.,LTD
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OEM GaN mobile phone chargers PD 65W Fast Charge Mobile Phone Charger 2 USB C USB A GaN Wall Charger
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...GaN fast charger New style 65W High Speed Single Port Charger: Connect a single USB C device to get a 65W max charge; Charge the MacBook Air M2 to 51% in 30 Minutes. One Charger, More Devices: Ugreen's 65W USB C charger provides an enormous 65W of charging power; enough to fast charge phones, tablets, and laptops; All from a single charger. Travel Friendly, Compact Design: Thanks to a cutting edge GaN chip......
Dongguan Xin Xuyuan Electronic Technology Co., LTD
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Fast GaN 65W Usb C Charger 3 Port For MacBook Laptop Samsung
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...ee devices simultaneously. And the 65W advanced charging chip could support 3x faster-charging speed than other normal chargers. Ideal fast charging adapter for business trips, home, office, and travelling. Equipped with GaN technology which enables 40%...
Shenzhen Landeal Electric Limited
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