High Breakdown Voltage SiC MOSFET For Smart Home Device Power Supplies
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Guangdong Lingxun Microelectronics Co., Ltd
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Adaptors High Voltage SiC Mosfet N Type Stable Multi Function
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Ultra-High Voltage N-Type MOSFET for Adaptors with Low Leakage of Less Than 1 µ A *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -......
Reasunos Semiconductor Technology Co., Ltd.
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EE2-5NU-L Compact and lightweight , High breakdown voltage Surface mounting type
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...High breakdown voltage, Surface mounting type DESCRIPTION The EE2 series surface-mounting type sustaining high-performance of NEC EC2 series. FEATURES Compact and light weight 2 form c contact arrangement Low power consumption Reduced mounting space : 15 mm × 9.5 mm High-breakdown voltage......
Anterwell Technology Ltd.
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EE2-5NU-L Compact and lightweight , High breakdown voltage Surface mounting type
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...High breakdown voltage, Surface mounting type DESCRIPTION The EE2 series surface-mounting type sustaining high-performance of NEC EC2 series. FEATURES Compact and light weight 2 form c contact arrangement Low power consumption Reduced mounting space : 15 mm × 9.5 mm High-breakdown voltage......
ChongMing Group (HK) Int'l Co., Ltd
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Electric Vehicle Use Copper Litz Wire 2uew-F-Pi 0.40*60 High Breakdown Voltage Taped
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...High Breakdown Voltage Taped Litz Wire The advantage of PI film is high stability. In high temperature and chemically corrosive environments, the signal transmission is reliable and not easily affected by external interference. In addition, PI film makes the circuit have better flexibility. Even if bent or rotated, it will not be damaged or affected. In terms of manufacturing process, PI film is highly...
Tianjin Ruiyuan Electric Material Co,.Ltd
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High Breakdown Voltage/ High Resistance Ceramic Heat Sink With 0.3-08Um Surface Roughness
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Shenzhen Antac Technology Limited
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Miniature Relays JTN1aS-PA-F-DC12V-Pana-sonic-Electromagnetic High breakdown voltage
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ShenZhen QingFengYuan Technology Co.,Ltd.
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6Inch Ultra-High Voltage SiC Epitaxial Wafer 100–500 μm For MOSFET Devices
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...High Voltage SiC Epitaxial Wafer Main Introduction 6Inch Ultra-High Voltage SiC Epitaxial Wafer 100–500 μm For MOSFET Devices This product is a high-purity, low-defect silicon carbide (SiC) epitaxial layer with a thickness ranging from 100 to 500 μm, grown on a 6-inch N-type 4H-SiC conductive substrate via high......
SHANGHAI FAMOUS TRADE CO.,LTD
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SIC Integrated Circuit Chip SCT040H65G3AG SiC MOSFETs H²PAK-7 Wide Bandgap Transistors
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SIC Integrated Circuit Chip SCT040H65G3AG SiC MOSFETs H²PAK-7 Wide Bandgap Transistors Product Description Of SCT040H65G3AG SCT040H65G3AG Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A in an H2PAK-7 package. Specification Of SCT040H65G3AG Part Number: SCT040H65G3AG Package: H²PAK-7 Drain-Source Breakdown Voltage......
ShenZhen Mingjiada Electronics Co.,Ltd.
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750319331 Auxiliary Gate Drive Transformer EP7 Package For SiC-MOSFET / IGBT
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... for 568 Vrms / 800 Vpk Operating temperature: -40 °C up to +130 °C Common control voltages for SiC MOSFET’s High Common-mode Transient Immunity (CMTI) Flyback, LLC, Half-Bridge topologies Up to 6 W output power Wide range input voltages 6 V to...
SHAREWAY TECHNOLOGY CO., LTD.
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