High Breakdown Voltage Silicon Carbide SBD For Data Center
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High Breakdown Voltage Silicon Carbide SBD For Data Center Features ·Negligible reverse recovery ·High surge current ·Positive temperature coefficient ·Higher frequency ·Halogen-free / RoHS compliant APPLICATIONS ·SMPS ·Solar inverter ·Data Center ·UPS Benefits ·High-speed switching ·Low heat dissipation requirements ·Reduce size and cost of the system ·High......
Guangdong Lingxun Microelectronics Co., Ltd
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PFC Circuit Silicon Carbide SBD Semiconductor High Frequency Stable
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Silicon Carbide SBD/Sic SBD - Material for Silicon Carbide Semiconductor *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -webkit-font-smoothing: antialiased; } img, picture, video, ......
Reasunos Semiconductor Technology Co., Ltd.
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Thermal 6 KV Breakdown Voltage Silicone Pad for CPU and Electronics Components
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Product Description: Constructed from high-quality Silicone material, this Thermal Conductive Pad ensures excellent thermal conductivity with a thermal conductivity rating of 2.0 W/mK. This means it effectively transfers heat away from the source, keeping......
Shenzhen Linmao Electronic Material Co.,Ltd.
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Black Silicon Carbide As Refractory In Ceramic Production Sic
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...Silicon Carbide Is Used as a Refractory in Ceramic Production Sic Description: Why can silicon carbide withstand such high voltages? Power devices, especially MOSFETs, must be able to handle extremely high voltages. SiC can achieve very high breakdown voltages, from 600V to several thousand volts, due to the dielectric breakdown strength of the electric field being about ten times higher than that of silicon......
Zhenan Metallurgy Co., Ltd
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6-Inch Silicon Carbide (SiC) Wafer for AR glasses MOS SBD
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Product Overview The 6-inch Silicon Carbide (SiC) wafer is a next-generation semiconductor substrate designed for high-power, high-temperature, and high-frequency electronic applications. With superior thermal conductivity, wide bandgap, and chemical ......
SHANGHAI FAMOUS TRADE CO.,LTD
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Oxide Bonded Silicon Carbide Kiln Furniture , Black Refractory Kiln Furniture
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... of attractive characteristics for high voltage power semiconductors when compared to commonly used silicon (Si). In particular, the much higher breakdown field strength and thermal conductivity of SiC allow creating devices which outperform by far the...
Yixing City Kam Tai Refractories Co.,ltd
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31A Silicon Carbide Schottky MSC010SDA170B SIC Integrated Circuit Chip TO-247-3
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...SiC SBD in a TO-247 package. Specification Of MSC010SDA170B Part Number: MSC010SDA170B Technology: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1700 V Current - Average Rectified (Io) (Per Diode): 31A Voltage - Forward (Vf) (Max) @ If: 1...
ShenZhen Mingjiada Electronics Co.,Ltd.
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2 Inch 6H - Semi Silicon Carbide Wafer Low Power Consumption For Detector
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...Silicon Carbide Wafer This 2-inch 6H semi-insulating silicon carbide (SiC) wafer is designed for applications requiring low power consumption, particularly in detectors. Silicon carbide is known for its exceptional high-temperature stability, high breakdown voltage, and excellent thermal conductivity, making it an ideal material for high......
SHANGHAI FAMOUS TRADE CO.,LTD
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1000 Watt Silicon Carbide Rod Heater High Temperature Heating SiC Rods
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H-type silicon carbide rod After the rod passes through the rod holes on both sides (or up and down) of the furnace wall, it should rotate freely 360 degrees to prevent forced installation and knocking. Before installing the rod, an iron pipe with the sam......
ZHENGZHOU SONGYU HIGH TEMPERATURE TECHNOLOGY CO.,LTD
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A92 High Current NPN Transistor , High Power NPN Silicon Transistor
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SOT-89-3L Plastic-Encapsulate Transistors A92 TRANSISTOR (NPN) FEATURE Low Collector-Emitter Saturation Voltage High Breakdown Voltage Marking :A92 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -310......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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