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igbt power transistor 80a

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UFD Series IGBT Power Transistor SGL160N60UFD 600V 160A 250W

China UFD Series IGBT Power Transistor SGL160N60UFD 600V 160A 250W on sale
IGBT Power Transistor SGL160N60UFD 600V 160A 250W UFD Series Gate Bipolar Transistors Description Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses.The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature. Features • High speed switching • Low saturation voltage : VCE(sat) = 2.1 V @ IC = 80A......
Shenzhen Retechip Electronics Co., Ltd

Address: Room L, 23rd Floor, Building B, Duhui 100, Zhonghang Rd, Futian District, Shenzhen City, Guangdong

Circuit Control Field Stop IGBT Power Transistor FGH60N60SMD 600V 60A

China Circuit Control Field Stop IGBT Power Transistor FGH60N60SMD 600V 60A on sale
... Parameter Distribution • RoHS compliant Applications • Solar Inverter, UPS, SMPS, PFC • Induction Heating Using Novel Field Stop IGBT Technology,...
Shenzhen Koben Electronics Co., Ltd.

Address: C12F, Huaqiang Plaza, Huaqiangbei Shenzhen,China 518031

IGBT Power Transistors NGTB40N120SWG Charging Pile Inverter Welding Chip

China IGBT Power Transistors NGTB40N120SWG Charging Pile Inverter Welding Chip on sale
...Igbt Power Module Transistors NGTB40N120SWG Charging Pile Inverter Welding Chip App Characteristics TJmax = 175°C • Soft Fast Reverse Recovery Diode Optimized for High Speed Switching 10 us Short Circuit Capability These are Pb−Free Devices Basic Data Product Attribute Attribute Value Manufacturer: onsemi Product Category: IGBT Transistors......
KZ TECHNOLOGY (HONGKONG) LIMITED

Address: RM4,16/F HO KING COMM CRT 2-16 FAYUEN ST MONGKOKKL

650V-1200V IGBT Power Transistor For High Power Electronic Controls

China 650V-1200V IGBT Power Transistor For High Power Electronic Controls on sale
...Power Transistor IGBT For High-Power Electronic Controls Product Description: The High-Power IGBT is packaged in a TO-247 package type, which is ideal for high-power applications. It has a voltage rating of 650V-1200V and can operate at an application frequency of 20KHz-60KHz, making it suitable for various applications. One of the key features of the High-Power IGBT......
Guangdong Lingxun Microelectronics Co., Ltd

Address: No.7,XingRong Road,ShiJie Town,Dongguan City,Guangdong Province,China

IXYK110N120A4 IGBT Power Transistor 1200V 375A 1360W Through Hole TO-264

China IXYK110N120A4 IGBT Power Transistor 1200V 375A 1360W Through Hole TO-264 on sale
... thin-wafer technology and a state-of-the-art 4th generation (GenX4™) trench IGBT process. These insulated-gate bipolar transistors feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. The...
HongKong Wei Ya Hua Electronic Technology Co.,Limited

Address: Room 3001-2, Tower A, World Trade Plaza, No. 9 Fuhong Road, Futian District, Shenzhen

268W AFGHL50T65SQD Automobile Chips 650V Single IGBT Transistors 80A Trench Field Stop

China 268W AFGHL50T65SQD Automobile Chips 650V Single IGBT Transistors 80A Trench Field Stop on sale
...IGBT Transistors 80A Trench Field Stop​ Product Description Of AFGHL50T65SQD AFGHL50T65SQD is 268W IGBT Trench Field Stop, 650V, 80A Single IGBTs Transistors, Through Hole, package is TO-247-3. Specification Of AFGHL50T65SQD Part Number: AFGHL50T65SQD Collector−To−Emitter Voltage: 650V Gate−To−Emitter Voltage: ±20V Transient Gate−To−Emitter Voltage: ±30V Collector Current @ TC = 25°C: 80A......
ShenZhen Mingjiada Electronics Co.,Ltd.

Address: 1239 New Asia Guoli Building Zhenzhong Road.,Futian district Shenzhen China

N Channel Mos Field Effect Transistor , High Power Transistor -30V/-80A

China N Channel Mos Field Effect Transistor , High Power Transistor -30V/-80A on sale
...Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available N Channel Mos Field Effect Transistor Applications Switching Application Power......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Address: Room 2013,DingCheng International Building, ZhenHua Road, FuTian District, ShenZhen, GuangDong Province

N Channel Mos Field Effect Transistor , High Power Transistor -30V/-80A

China N Channel Mos Field Effect Transistor , High Power Transistor -30V/-80A on sale
...Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available N Channel Mos Field Effect Transistor Applications Switching Application Power......
Beijing Silk Road Enterprise Management Services Co.,LTD

IKW50N60H3 IGBT Power Module High-Performance Low-Loss 600V 50A 3-Phase Switching

China IKW50N60H3 IGBT Power Module High-Performance  Low-Loss 600V 50A 3-Phase Switching on sale
...Max. Collector Current (Icm): 80A • Gate Emitter Voltage (VGE): ±20V • Collector Emitter Saturation Voltage (Vce(sat)): 2.1V@25A • Operating Frequency (f): up to ......
Shenzhen Sai Collie Technology Co., Ltd.

Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen

MMBT5551LT1G IGBT Power Module 600mA 160V BJT Bipolar Transistors

China MMBT5551LT1G IGBT Power Module 600mA 160V BJT Bipolar Transistors on sale
... IGBT Power Module 600mA 160V BJT Bipolar Transistors MMBT5551LT1G SOT-23-3 Bipolar Transistors - BJT 600mA 160V NPN Manufacturer: onsemi Product Category: Bipolar Transistors - BJT RoHS: Details Mounting Style: SMD/SMT Package / Case: SOT-23-3 Transistor ......
QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED

Address: FLAT/RM D52 3/F WONG KING INDUSTRIAL BUILDING NO 2TAU=I YAU STREET

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