IRG7PH42UDPBF IGBT Power Transistors 1200V 85A 320W TO247AC Infineon Technologies 7PH42 Mosfet
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...IGBT Power Module Transistors IGBTs Single IRG7PH42UDPBF Specifications Part Status Active IGBT Type Trench Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 85A Current - Collector Pulsed (Icm) 90A Vce(on) (Max) @ Vge, Ic 2V @ 15V, 30A Power......
KZ TECHNOLOGY (HONGKONG) LIMITED
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FGH60N60SMD IGBT Power Transistor
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Fgh60n60sfd Igbt Power Transistor 60a 600v To247 Igbt Transistors Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom......
Shenzhen Retechip Electronics Co., Ltd
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Circuit Control Field Stop IGBT Power Transistor FGH60N60SMD 600V 60A
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... Parameter Distribution • RoHS compliant Applications • Solar Inverter, UPS, SMPS, PFC • Induction Heating Using Novel Field Stop IGBT Technology,...
Shenzhen Koben Electronics Co., Ltd.
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650V-1200V IGBT Power Transistor For High Power Electronic Controls
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...Power Transistor IGBT For High-Power Electronic Controls Product Description: The High-Power IGBT is packaged in a TO-247 package type, which is ideal for high-power applications. It has a voltage rating of 650V-1200V and can operate at an application frequency of 20KHz-60KHz, making it suitable for various applications. One of the key features of the High-Power IGBT......
Guangdong Lingxun Microelectronics Co., Ltd
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IXYK110N120A4 IGBT Power Transistor 1200V 375A 1360W Through Hole TO-264
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... thin-wafer technology and a state-of-the-art 4th generation (GenX4™) trench IGBT process. These insulated-gate bipolar transistors feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. The...
HongKong Wei Ya Hua Electronic Technology Co.,Limited
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MMBT5551LT1G IGBT Power Module 600mA 160V BJT Bipolar Transistors
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... IGBT Power Module 600mA 160V BJT Bipolar Transistors MMBT5551LT1G SOT-23-3 Bipolar Transistors - BJT 600mA 160V NPN Manufacturer: onsemi Product Category: Bipolar Transistors - BJT RoHS: Details Mounting Style: SMD/SMT Package / Case: SOT-23-3 Transistor ......
QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED
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IGBT Power Module 2DI50D-055A POWER TRANSISTOR MODULE FUJITSU igbt power module
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... conversion modules of famous brands Categories include: Darlington Schottky, rectifier intelligent, IGBT, IPM, GTR, DC-DC, AC-DC rectifier and power supply and other modules. Applications: power conditioning, frequency conversion equipment, motor speed,...
Mega Source Elec.Limited
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IRG4PC40UDPBF IGBT Power Module High Quality High Efficiency Low Loss Operation
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... IGBT Power Module High Quality High Efficiency Low Loss Operation IRG4PC40UDPBF IGBT Power Module The IRG4PC40UDPBF IGBT power module from Infineon is a high voltage (HV) insulated gate bipolar transistor (IGBT) module. It is designed for high power ......
Shenzhen Sai Collie Technology Co., Ltd.
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FS300R17OE4B81BPSA1 1700V 300A 20mW Medium Power IGBT Modules Transistors
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...Power IGBT Modules Transistors Product Description Of FS300R17OE4B81BPSA1 FS300R17OE4B81BPSA1 feature TRENCHSTOP™ IGBT7, Emitter Controlled 7 diode and NTC. Specification Of FS300R17OE4B81BPSA1 Part Number FS300R17OE4B81BPSA1 Input Capacitance (Cies) @ Vce 24.3 nF @ 25 V Input Standard NTC Thermistor Yes Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Features Of Automotive IGBT...
ShenZhen Mingjiada Electronics Co.,Ltd.
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Multifunctional Power Transistor And IGBT High Voltage 1200V 40A
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... is designed to support applications with high frequency up to 60KHz, and offers a current density of 400A/c㎡. High Power IGBT is an ideal choice for use in a wide range of applications requiring high speed switching and high power. Technical Parameters:...
Reasunos Semiconductor Technology Co., Ltd.
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