Automotive IGBT Modules FP25R12W2T7B11 Medium Power IGBT Module 1200V 25A 20mW Chassis Mount
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Automotive IGBT Modules FP25R12W2T7B11 Medium Power IGBT Module 1200V 25A 20mW Chassis Mount [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery ......
ShenZhen Mingjiada Electronics Co.,Ltd.
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IGBT Power Module 6MBI25-120 IGBT MODULE(1200V 25A) FUJITSU IGBT Power Module
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...IGBT MODULE(1200V 25A). Part NO: 6MBI25-120 Brand: FUJITSU Date Code: 05+ Quality Warranty: 3 Months Mounting Type: Screws Overview We specialize in high power and power conversion modules of famous brands Categories include: Darlington Schottky, rectifier intelligent, IGBT......
Mega Source Elec.Limited
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AUIRG4PH50S Infineon IGBT Transistors 1200V DC-1 KHZ (STD) DISCRETE AUTO IGBT
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...IGBT Transistors 1200V DC-1 KHZ (STD) DISCRETE AUTO IGBT 1.FEATURES Standard: Optimized for minimum saturation voltage and low operating frequencies (< 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency • Industry standard TO-247AC package • Lead-Free • Automotive Qualified * 2.BENEFITS Generation 4 IGBT's offer highest efficiency available IGBT......
Shenzhen Hongxinwei Technology Co., Ltd
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High Ruggedness IGBT Power Transistor IKW25N120T2 K25T1202 1200V 25A
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... discrete with anti-parallel diode in TO-247 package Infineon 1200V Gen8 IGBTs feature trench gate field stop technology delivered in industry standard TO-247 packages to provide best-in-class performance for ......
Shenzhen Retechip Electronics Co., Ltd
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IKW25T120 Through Hole IGBT Transistor IC Chip LOW LOSS DuoPack 1200V 25A
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IKW25T120 Through Hole IGBT Transistors LOW LOSS DuoPack 1200V 25A ●Approx. 1.0V reduced VCE(sat) and 0.5V reduced VF compared to BUP314D ●Short circuit withstand time – 10s ●......
Walton Electronics Co., Ltd.
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IXYK110N120A4 IGBT Power Transistor 1200V 375A 1360W Through Hole TO-264
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... thin-wafer technology and a state-of-the-art 4th generation (GenX4™) trench IGBT process. These insulated-gate bipolar transistors feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. The...
HongKong Wei Ya Hua Electronic Technology Co.,Limited
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H30R1602 H20R1353 Throught Hole IGBT Transistor H15R1203 H30R1353
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...Transistors - IGBTs - Single Manufacturer Infineon Technologies Series - Packaging Tube Part Status Obsolete IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 50A Current - Collector Pulsed (Icm) 75A Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 25A......
Shenzhen Quanyuantong Electronics Co., Ltd.
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Siemens 6SY7000-0AE73 S SIMOVERT MASTER DRIVES IGBT TRANSISTOR MODULE 300A 1200V
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...-0AE73 S SIMOVERT MASTER DRIVES IGBT TRANSISTOR MODULE 300A 1200V Descripition Part Number 6SY7000-0AE73 Manufacturer / Brand SIEMENS Category Discrete Semiconductor Products > Transistors - IGBTs - Modules Description IGBT Modules Description IC FLASH ......
Shenzhen Wisdomlong Technology CO.,LTD
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IRG7PH42UDPBF IGBT Power Transistors 1200V 85A 320W TO247AC Infineon Technologies 7PH42 Mosfet
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IRG7PH42UDPBF IGBT Power Module Transistors IGBTs Single IRG7PH42UDPBF Specifications Part Status Active IGBT Type Trench Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 85A Current - Collector Pulsed (Icm) 90A Vce(on) (Max......
KZ TECHNOLOGY (HONGKONG) LIMITED
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Multifunctional Power Transistor And Inverter IGBT 40A 1200V Fast Switching
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Multifunctional Power Transistor And Inverter IGBT High Voltage 1200V 40A Features • Positive temperature coefficient • Fast Switching • Low VCE(sat) • Reliable and Rugged High ruggedness performance • Very ......
Guangdong Lingxun Microelectronics Co., Ltd
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