KMP25H12X4-7M Igbt Power Module Insulated Gate Transistor Pack Industrial Power Management
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...functionality of an Isolated Gate Thyristor Module (IGT) and an Insulated Gate Transistor Block (IGT) into a single integrated device. This innovative module offers unparalleled performance and efficiency in a wide range of power electronics ......
Krunter Future Tech (Dongguan) Co., Ltd.
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Durable Industrial High Current IGBT , Energy Storage Insulated Gate Transistor
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... current density and faster switching speed. It has a current density of 400A/c㎡ and a switching speed of 60KHz. The high power bipolar transistor is widely used in OBC, charging piles, welding machines, switching power supplies, photovoltaic inverters,...
Reasunos Semiconductor Technology Co., Ltd.
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IKW15N120T2 IGBT Power Transistor
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IKW15N120T2 IGBT Transistors LOW LOSS DuoPack 1200V 15A Hard Switching Anti Parallel Diode Description 1200 V, 15 A IGBT discrete with anti-parallel diode in TO-247 package Hard-switching 1200 V, 15 A TRENCHSTOP™ IGBT co-packed with free-wheeling diode in ......
Shenzhen Retechip Electronics Co., Ltd
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General Electric DS200IIBDG1AEA DS200IIBDG1A GE Insulated Gate Bipolar Transistor Board
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... that provide a status of the processing of the board. The LEDs are visible from the interior of the circuit board cabinet and are red in color when lit. The GE Insulated Gate Bipolar Transistor (IGBT) Board DS200IIBDG1A has several connectors and when you...
Joyoung International Trading Co.,Ltd
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Ultra Fast IGBT Transistor N Channel , Insulated Gate Bipolar Transistor With Built In Diode
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G40N60UFD Ultra fast IGBT Transistor N-Channel with Built in Diode 600V 40A 160W, TO-3P Descriptions: Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for ......
Shenzhen ATFU Electronics Technology ltd
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GT20J101 Thyristor Module Insulated Gate Bipolar Transistor Silicon N Channel
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...) = 2.7 V (max) Characteristic Symbol Rating Unit Collector-emitter voltage VCES 600 V Gate-emitter voltage VGES +-20 V Collector current DC IC 20 A Collector current 1 ms ICP 40 A Collector ......
DELI ELECTRONICS TECHNOLOGY CO.,LTD
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MGW12N120D Power Mosfet Transistor Insulated Gate Bipolar Transistor with Anti-Parallel Diode
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... Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high ......
ChongMing Group (HK) Int'l Co., Ltd
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GP4068D Power Mosfet Transistor INSULATED GATE BIPOLAR TRANSISTOR
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IRGP4068DPbF IRGP4068D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • Low VCE (ON) Trench IGBT Technology • ......
Anterwell Technology Ltd.
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LTV-356T-D Power Isolator IC Industry-Leading Insulated Gate Bipolar Transistor (IGBT) Driver
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...Insulated Gate Bipolar Transistor (IGBT) Driver Product: LTV-356T-D Power Isolator IC Features: • Maximum working voltage: 50V • Maximum output current: 1.5A • Operating temperature range: -40°C to +85°C • Lead-free and RoHS compliant • Low power consumption • High efficiency • Low EMI • High temperature stability • High reliability and long term durability • Excellent electrical insulation......
Shenzhen Sai Collie Technology Co., Ltd.
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High Efficiency Insulated Gate Bipolar Transistor 650V-1200V For Electric Motors
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High Efficiency Insulated Gate Bipolar Transistor For Electric Motors Product Description: Designed for extreme performance, this IGBT device boasts a package type of TO-247, which is widely used in high voltage and high power applications. With a wide ......
Guangdong Lingxun Microelectronics Co., Ltd
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