Silicon Carbide Junction Transistor DF17MR12W1M1HFB68BPSA1 Automotive IGBT Modules
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..., 1200 V 45A (Tj) 20mW, Chassis Mount. Specification Of DF17MR12W1M1HFB68BPSA1 Part Number: DF17MR12W1M1HFB68BPSA1 Technology: SiC (Silicon Carbide Junction Transistor) Drain To Source Voltage (Vdss): 1200V Vgs(Th) (Max) @ Id: 5.15V @ 20mA Power -...
ShenZhen Mingjiada Electronics Co.,Ltd.
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Industrial Silicon Carbide 88% 1-3mm Granules for Steel Plant Deoxidation with High Carbon and Exothermic Reaction
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...Industrial Silicon Carbide 88% (1-3mm) for Steel Plant Deoxidation Optimize your steel production process with ZhenAn's premium Silicon Carbide 88% granules, specifically engineered for superior deoxidation performance in modern steel plants. Reduce Silicon......
Zhenan Metallurgy Co., Ltd
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MJE3055T TO-220 Complementary Silicon Plastic Power Transistors
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...Silicon Plastic Power Transistors Description 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS − 75 WATTS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor......
Shenzhen Sai Collie Technology Co., Ltd.
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High Voltage Silicon Carbide JFET Transistor Infineon IJW120R070T1FKSA1 for Power Management Systems
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... properties of silicon carbide with a normally-on JFET concept, this transistor offers ultra-fast switching, low intrinsic capacitance, and low gate charge, enabling higher system efficiency, increased power density, and reduced cooling requirements....
Hefei Purple Horn E-Commerce Co., Ltd.
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RF Power Transistors MRW53601 NPN SILICON RF POWER TRANSISTOR MOTOROLA RF Power Transistors
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MRW53601 is a NPN SILICON RF POWER TRANSISTOR. Part NO: MRW53601 Brand: MOTOROLA Date Code: 03+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products are ......
Mega Source Elec.Limited
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IRF3205PBF Silicon Npn Power Transistors 55V 110A 8.0mΩ Power MOSFET
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...Silicon Npn Power Transistors 55V 110A 8.0mΩ Power MOSFET Npn Power Transistor Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power......
Shenzhen Retechip Electronics Co., Ltd
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BD135 Silicon NPN Power Transistors high voltage power mosfet dual power mosfet
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BD135 Silicon NPN Power Transistors high voltage power mosfet dual power mosfet This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. ......
ChongMing Group (HK) Int'l Co., Ltd
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BD135 Silicon NPN Power Transistors high voltage power mosfet dual power mosfet
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BD135 Silicon NPN Power Transistors high voltage power mosfet dual power mosfet This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. ......
Anterwell Technology Ltd.
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2SC2987 Silicon NPN Power Transistors , 120W 20A High Power Transistor
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2SC2987 NPN PNP Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type 2SA1227 ·High power dissipation APPLICATIONS ·For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2Collector;......
DELI ELECTRONICS TECHNOLOGY CO.,LTD
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A42 Silicon NPN Power Transistors , NPN Power Transistor High Current
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SOT-89-3L Plastic-Encapsulate Transistors A42 TRANSISTOR (NPN) FEATURE Low Collector-Emitter Saturation Voltage High Breakdown Voltage Marking :D965A MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage ......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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