Multifunctional Power Transistor And IGBT High Voltage 1200V 40A
|
... is designed to support applications with high frequency up to 60KHz, and offers a current density of 400A/c㎡. High Power IGBT is an ideal choice for use in a wide range of applications requiring high speed switching and high power. Technical Parameters:...
Reasunos Semiconductor Technology Co., Ltd.
|
MJE182 POWER TRANSISTOR Bipolar (BJT) Single Transistor NPN 80V TO-225 MJE182G
|
MJE182 POWER TRANSISTOR Bipolar (BJT) Single Transistor NPN 80V TO-225 MJE182G Bipolar (BJT) Single Transistor NPN 80V 3A 1.5W TO-225 Through Hole Most Popular Power Bipolar Transistors JANTX2N2222AUB BCP56-16T1G MJD122T4G BCX5616TA PZT2907AT1G BCP56-16 ......
Angel Technology Electronics Co
|
Transistors FF450R12ME4 IGBT Module Trench Field Stop Half Bridge Inverter
|
Transistors FF450R12ME4 IGBT Module Trench Field Stop Half Bridge Inverter Product Description Of FF450R12ME4 FF450R12ME4 is 1200 V, 450 A dual IGBT Module with TRENCHSTOP™ IGBT4, Emitter Controlled HE diode and NTC. Also available with Thermal Interface......
ShenZhen Mingjiada Electronics Co.,Ltd.
|
2SB649A Power Mosfet Transistor Bipolar Power General Purpose Transistor
|
2SB649/A PNP SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB669/A ORDERING INFORMATION ABSOLUTE MAXIMUM RATING (Ta=25℃, unless otherwise specified) PARAMETER SYMBOL ......
Anterwell Technology Ltd.
|
Battery Tab Spot Welding Transistor bipolar bench battery spot welding machine
|
...Transistor bipolar bench battery spot welding machine Equipment introduction ● Adopting self-developed precision welding head, the pressure is precisely adjusted and controlled. ● Bipolar output eliminates the welding polarity effect and makes the energy on both sides of the welding electrode consistent, while effectively eliminating the welding sticky pin phenomenon. ● Welding voltage/current during bipolar......
Shenzhen Chebao Technology Co., Ltd
|
Super Low Noise HEMT FUJI FHX13LG Discrete Transistors Bipolar RF Amplifier
|
Super Low Noise HEMT FUJI FHX13LG Discrete Transistors Bipolar RF Amplifier 218-0738003 Computer GPU CHIP AMD IC We have new and original parts below: FHX13LG Discrete Transistors Bipolar RF Amplifier ic chips New and Original IC Electronic Parts ......
Mega Source Elec.Limited
|
Customization Integrated Circuit Transistor Bipolar Bcx56 Lastest DC
|
... BIPOLAR TRANSISTOR CUSTOMIZAION INTEGRATED CIRCUITS ORIGINAL Warranty: Global 180 Days Return Shipment: DHL,TNT,Fedex Customiazaion: Accepted Oem: Welcome High Light: BCX56 Bipolar Transistor , Customizaion Bipolar Transistor BCX56 Bipolar Transistor ......
Shenzhen Huahao Gaosheng Technology Co., Ltd
|
2SB1424 ROHM UTC ICS Simbol Transistor Bipolar BJT ROHS 2SB1424 PNP Low VCE
|
...UTC ICS 2SB1424 Bipolar Transistors - BJT ROHS 2SB1424 PNP Low VCE(sat) Transistor Product Paramenters Manufacturer: ROHM Semiconductor Product Category: Bipolar Transistors - BJT RoHS: Details Mounting Style: SMD/SMT Transistor Polarity: PNP Configuration......
ShenZhen QingFengYuan Technology Co.,Ltd.
|
40N60 Transistor FGH40N60 Transistor FGH40N60SMD IGBT 40N60 Original TO-247 Field Stop 600V 80A
|
Product Detail Packaging Tube Part Status Active IGBT Type Field Stop Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 80A Current - Collector Pulsed (Icm) 120A Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 40A Power - Max 349W ......
Shenzhen Quanyuantong Electronics Co., Ltd.
|
IGBT CoolMOS Power Discrete Semiconductor SPW35N60C3 Transistor Mosfet IGBT N-Ch 650V 34.6A
|
Product Range IGBT CoolMOS Discrete Semiconductors SPW35N60C3 MOSFET N-Ch 650V 34.6A TO247-3 App Characteristics New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv /dt rated Ultra low effective capacitances ......
KZ TECHNOLOGY (HONGKONG) LIMITED
|