IRGP4063 IRGP4063D IRGP4063DPBF Trench IGBT Transistor TO-247AC 96A
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Product Detail Categories Discrete Semiconductor Products Transistors - IGBTs - Single Manufacturer Infineon Technologies Series - Packaging Tube Part Status Active IGBT Type Trench Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic......
Shenzhen Quanyuantong Electronics Co., Ltd.
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650V Automobile Chips AFGHL50T65SQDC Field Stop Trench IGBT Transistors TO-247-3
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... generation high speed IGBT technology. Specification Of AFGHL50T65SQDC Part Number: AFGHL50T65SQDC Current - Collector (Ic) - Max: 80 A Operating Temperature(Min): -55°C (TJ) ......
ShenZhen Mingjiada Electronics Co.,Ltd.
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IRGP4063-EPBF IGBT Power Module Transistors IGBTs Single
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IRGP4063-EPBF Specifications Part Status Obsolete IGBT Type Trench Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 96A Current - Collector Pulsed (Icm) ......
KZ TECHNOLOGY (HONGKONG) LIMITED
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1200V 48A 529W IGBT Transistor Module , Trench Field Stop IGBT AFGHL40T120RLD
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...IGBT Trench Field Stop 1200 V 48 A 529 W Through Hole TO-247-3 Product Attribute Attribute Value Select Attribute Manufacturer: onsemi Product Category: IGBT Transistors RoHS: Details Package / Case: TO-247-3 Packaging: Tube Brand: onsemi Product Type: IGBT Transistors Factory Pack Quantity: 30 Subcategory: IGBTs...
HongKong Wei Ya Hua Electronic Technology Co.,Limited
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Original 3 Pin Transistor FGA25N120ANTD 1200V NPT Trench IGBT
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...Trench IGBT Features • NPT Trench Technology, Positive temperature coefficient • Low saturation voltage: VCE(sat), typ = 2.0V @ IC = 25A and TC = 25°C • Low switching loss: Eoff, typ = 0.96mJ @ IC = 25A and TC = 25°C • Extremely enhanced avalanche capability Description Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT......
Anterwell Technology Ltd.
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FGA25N120ANTD TO-3P NPT Trench IGBT 25A 1200V
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...Trench IGBT 25A 1200V Features • NPT Trench Technology, Positive temperature coefficient • Low saturation voltage: VCE(sat), typ = 2.0V @ IC = 25A and TC = 25°C • Low switching loss: Eoff, typ = 0.96mJ @ IC = 25A and TC = 25°C • Extremely enhanced avalanche capability Description Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT......
DELI ELECTRONICS TECHNOLOGY CO.,LTD
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FGA25N120ANTDTU Power Mosfet Transistor New & Original 1200V NPT Trench IGBT
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...Trench IGBT Features • NPT Trench Technology, Positive temperature coefficient • Low saturation voltage: VCE(sat), typ = 2.0V @ IC = 25A and TC = 25°C • Low switching loss: Eoff, typ = 0.96mJ @ IC = 25A and TC = 25°C • Extremely enhanced avalanche capability Description Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT......
ChongMing Group (HK) Int'l Co., Ltd
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STGW60H65DFB High Speed Igbt 600V 60A Field Stop Trench Igbt
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Trench gate field-stop 650 V, 60 A high speed HB series IGBT Features • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • Low saturation ......
Shenzhen Retechip Electronics Co., Ltd
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High Frequency Inverters IC Chips IGBT Transistors 650V 80A 375W STGWA60H65DFB
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... - IGBTs - Single Manufacturer STMicroelectronics Series - Packaging Tube Part Status Active IGBT Type Trench Field Stop Voltage - Collector Emitter Breakdown (Max) 650V Current - Collector (Ic) (Max) 80A Current - Collector ......
Shenzhen Weitaixu Capacitor Co.,Ltd
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Ultra Fast IGBT Transistor N Channel , Insulated Gate Bipolar Transistor With Built In Diode
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G40N60UFD Ultra fast IGBT Transistor N-Channel with Built in Diode 600V 40A 160W, TO-3P Descriptions: Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for ......
Shenzhen ATFU Electronics Technology ltd
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