EE2-5NU-L Compact and lightweight , High breakdown voltage Surface mounting type
|
...High breakdown voltage, Surface mounting type DESCRIPTION The EE2 series surface-mounting type sustaining high-performance of NEC EC2 series. FEATURES Compact and light weight 2 form c contact arrangement Low power consumption Reduced mounting space : 15 mm × 9.5 mm High-breakdown voltage of coil to contacts : 1500 Vac, 2500 V (rise time : 2 µs, fall time : 10 µs) Low......
Anterwell Technology Ltd.
|
EE2-5NU-L Compact and lightweight , High breakdown voltage Surface mounting type
|
...High breakdown voltage, Surface mounting type DESCRIPTION The EE2 series surface-mounting type sustaining high-performance of NEC EC2 series. FEATURES Compact and light weight 2 form c contact arrangement Low power consumption Reduced mounting space : 15 mm × 9.5 mm High-breakdown voltage of coil to contacts : 1500 Vac, 2500 V (rise time : 2 µs, fall time : 10 µs) Low......
ChongMing Group (HK) Int'l Co., Ltd
|
FDN342P MOSFET Power Electronics: High Power Low Loss High Efficiency Switching Solutions
|
...MOSFET Power Electronics: High Power Low Loss High Efficiency Switching Solutions Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id) @ 25°C 2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 80mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 9 nC @ 4.5 V Vgs (Max) ±12V Input Capacitance (Ciss......
Shenzhen Sai Collie Technology Co., Ltd.
|
Multipurpose High Voltage MOSFET Heat Dissipation For LED Driver
|
...High Voltage MOSFET – an embedded FRD HV MOSFET with a low on-resistance and high voltage/ultra-high voltage rating. Designed with MOSFET technology, this ultra-high voltage MOSFET is perfect for applications that require high voltage or ultra-high voltage power. Its low on-resistance provides high efficiency and low power loss. This type N MOSFET is the perfect choice for any high voltage or ultra-high...
Reasunos Semiconductor Technology Co., Ltd.
|
Aviation Parts IRFR9214PBF MOSFET P-Chan Drain-Source Breakdown Voltage 250 V
|
...MOSFET P-Chan Drain-Source Breakdown Voltage 250 V Descriptions of Aviation Parts: Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs......
XIXIAN FORWARD TECHNOLOGY LTD
|
High Speed Power MOSFET IGBT Driver 3 Phase High Voltage Gate Driver
|
High Speed Power MOSFET and IGBT driver 3-Phase High Voltage Gate Driver DESCRIPTION The JY213H is a high speed power MOSFET and IGBT driver with three independent high and low side referenced output channels for 3-phase gate driver. Built-in deadtime protection and Shoot-through protection that prevent half-bridge breakdown. The UVLO circuits prevent malfunction when VCC and VBS are lower than the specified threshold voltage. 600V high-voltage...
Shanghai Juyi Electronic Technology Development Co., Ltd
|
2N4416 Transistor IC Chip Through Hole JFET N Channel 30V Low Ciss
|
... are targeted for sensitive mixer and VHF Amplifier amplifier designs. Gate leakages are typically less than 10pA at room temperatures. The “A” variant has a higher breakdown Voltage. The...
Walton Electronics Co., Ltd.
|
High Switching Speed Mosfet Power Transistor For Linear Power Supplies
|
High Switching Speed Mosfet Power Transistor For Linear Power Supplies General Description • Trench Power MOSFET technology • Low R DS(ON) • Logic Level Driving • RoHS and Halogen-Free Compliant Application • Industrial and Motor Drive applications Parameters Part Number Status Package Polarity VDS (V) VGS (±V) ID (A) PD (W) RDS(ON) (mΩ max)† at VGS= VGS(th) (max V) Ciss......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
|
High Switching Speed Mosfet Power Transistor For Linear Power Supplies
|
|
High Switching Speed Mosfet Power Transistor For Linear Power Supplies General Description • Trench Power MOSFET technology • Low R DS(ON) • Logic Level Driving • RoHS and Halogen-Free Compliant Application • Industrial and Motor Drive applications Parameters Part Number Status Package Polarity VDS (V) VGS (±V) ID (A) PD (W) RDS(ON) (mΩ max)† at VGS= VGS(th) (max V) Ciss......
Beijing Silk Road Enterprise Management Services Co.,LTD
|
N Channel High Voltage Mosfet 650V 10A High Accuracy RoHS Compliant TO-220F
|
N Channel High Voltage Mosfet 650V 10A High Accuracy RoHS Compliant TO-220F Applications Adapter & Charger SMPS Standby Power AC-DC Switching Power Supply LED driving power Features Low On Resistance Low Gate Charge Peak Current vs Pulse Width Curve RoHS ......
Guangdong Huixin Electronics Technology Co., Ltd.
|
Submit your “low ciss high breakdown voltage mosfet” inquiry in a minute :