4H Semi-Insulating SiC Wafer With Low TTV/BOW/WARP, Dummy Grade,3”Size
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.... SiC wafer is a next generation semiconductor materialwith unique electrical properties and excellent thermal properties for high temperature and high power device application. SiC wafer can be supplied in diameter 2~6 inch, both 4H and 6H SiC , N-type ,...
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
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Semi Insulating Silicon Carbide Wafer SiC Substrate Orientation 0001 Bow/Warp ≤50um
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Product Description: ZMSH — Innovative Manufacturer and Supplier of SiC Substrate Wafers As the leading manufacturer and supplier of SiC (Silicon Carbide) substrate wafer, ZMSH not only offers the best price on the market for 2 inch and 3 inch Research ......
SHANGHAI FAMOUS TRADE CO.,LTD
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Reliable Sapphire Substrate With TTV ≤3μM For Precision Applications
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...TTV ≤3μm for Precision Applications Product Description: Sapphire Slice/Plate/Wafer is a precision product made of sapphire crystal. It features high parallelism (≤3 Arc Sec), diameter (2inch-8inch), orientation (±30'), bow & warp (≤20μm) and thickness (0.5mm-3mm). It is widely used in electronic, optoelectronic, aerospace, and other high-tech industries. Sapphire wafer......
Hangzhou Freqcontrol Electronic Technology Ltd.
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6 Inch Sapphire Wafer BF33 For GaAs Semiconductor Carrier Plate
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... degree Primary flat orientation: A plane +/- 1 degree Primary flat length: 47.5 mm +/- 1 mm Total Thickness Variation (TTV): <20 um Bow: <25 um Warp:...
SHANGHAI FAMOUS TRADE CO.,LTD
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100mm Single Crystal Sapphire Wafer 99.995％ Al2O3
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...Wafer Single Side Polished Specification Orientation (22-43)Plane offcut 0.45° away from C plane-per sketch 22-43 Diameter 100mm ± 0.2mm Thickness 650um ± 20um / 850um ± 20um Bow <10 microns Warp <20 microns TTV <10 microns Major Flat M-axis +0.3°; 32+1mm Minor Flat None Front Side < 0.30nm Back Side <1.2 micron Laser ID marked on backside by major flat Packaged Cassette containing 25 wafers......
Chongqing Silian Optoelectronic Science & Technology Co., Ltd.
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