N Type 1200V SiC Power Mosfet , Metal Oxide Silicon Field Effect Transistor
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                                            ...Silicon Carbide Metal-Oxide-Semiconductor Field Effect Transistor (SiC MOSFET) is a high power, low on resistance, high frequency device with excellent switching performance. It is widely used in Solar Inverter, High-voltage DC/DC Converter, Motor Driver, UPS Power Supply, Switching Power Supply and Charging Pile. This device uses the most advanced silicon......                                         
                                            Reasunos Semiconductor Technology Co., Ltd.
                                         
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TO-220F Metal Oxide Semiconductor Field Effect Transistors 15A 600V 274mΩ
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                                            15A 600V 274mΩ TO-220F Metal-Oxide-Semiconductor Field-Effect Transistors N-channel Super Junction MOSFET Part No.:LC60R280F Package:TO-220F MAIN CHARACTERISTICS ID:15A VDSS:600V RDSON-typ ......                                         
                                            Guangdong Lingxun Microelectronics Co., Ltd
                                         
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PD57018-E RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistors Black RF MOSFET Transistors
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                                            Product name:PD57018-E Manufacturer: STMicroelectronics Product Category: RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistors Transistor Polarity: N-Channel Technology: Si Id-Continuous Drain Current: 2.5 A Vds-drain-source breakdown voltage......                                         
                                            Beijing Silk Road Enterprise Management Services Co.,LTD
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JFET BLF245 N-Channel Silicon Field Effect Transistor
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                                            BLF245 N/A Electronic Components IC MCU Microcontroller Integrated Circuits BLF245 #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width:......                                         
                                            Shenzhen Kaigeng Technology Co., Ltd.
                                         
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STD2NK60Z-1 Field Effect Transistor Transistors FETs MOSFETs Single
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                                            STD2NK60Z-1 Specifications Part Status Obsolete FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 1.4A (Tc) Drive Voltage (Max Rds On,Min Rds On) - Vgs(th) (Max) @ Id 4.5V @ 50µA ......                                         
                                            KZ TECHNOLOGY (HONGKONG) LIMITED
                                         
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TK13A60D TOSHIBA Field Effect Transistor
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                                            TK13A60D(STA4,Q,M) TOSHIBA Field Effect Transistor 13A 600V 0.33 Ohm N-Channel MOS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Applications Switching Voltage Regulators Description Toshiba π-MOS VII MOSFETs are 10V Gate Drive, ......                                         
                                            Shenzhen Retechip Electronics Co., Ltd
                                         
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IC 3 Pin Transistor 2SK3797 MOS Field Effect Transistor Stock Offer
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                                            IC 3 Pin Transistor 2SK3797 MOS Field Effect Transistor Stock Offer 2SK3797 Field Effect Transistor Silicon N-Channel MOS Type Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.32Ω (typ.) • High forward ......                                         
                                            Anterwell Technology Ltd.
                                         
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NVTR0202PLT1G MOSFET Power Electronics Dual N-Channel Enhancement Mode Field Effect Transistor 20V 2A TO-236-3 Package
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                                            NVTR0202PLT1G MOSFET Power Electronics Dual N-Channel Enhancement Mode Field Effect Transistor 20V 2A TO-236-3 Package FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id) @ 25°C 400mA (Ta......                                         
                                            Shenzhen Sai Collie Technology Co., Ltd.
                                         
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60V Mos Field Effect Transistor N Channel AlphaSGT HXY4264 Silicon Material
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                                            60V N-Channel AlphaSGT HXY4264 Product Summary VDS 60V ID (at VGS=10V) 13.5A RDS(ON) (at VGS=10V) < 9.8mΩ RDS(ON) (at VGS=4.5V) < 13.5mΩ General Description Trench Power AlphaSGTTM technology Low RDS(ON) Low Gate Charge Applications High efficiency power ......                                         
                                            Shenzhen Hua Xuan Yang Electronics Co.,Ltd
                                         
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WSF28N06 Field Effect Transistor IC Chip N Channel MOSFET Metal Oxide
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                                            #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width:2px;padding-top:8px;padding-bottom:4px}#detail_decorate_root .magic-1{margin-bottom:......                                         
                                            Shenzhen Res Electronics Limited
                                         
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