MT29F1G08ABAEAH4:E 1 Gbit Parallel NAND Flash Memory IC Chip with Asynchronous I/O in VFBGA-63 Package
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MT29F1G08ABAEAH4:E Memory IC Chip 1Gbit Parallel NAND Flash Memory In VFBGA-63 Package Product Description Of MT29F1G08ABAEAH4:E MT29F1G08ABAEAH4:E is 1Gbit Parallel NAND Flash Memory In VFBGA-63 Package. NAND Flash devices include an asynchronous data interface for high performance I/O operations. These devices use a highly multiplexed 8-bit bus (I/Ox) to transfer commands, address, and data. Specifications Of MT29F1G08ABAEAH4......
ShenZhen Mingjiada Electronics Co.,Ltd.
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Memory Integrated Circuits MT29F1G08ABAEAH4-IT:E TR
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The MT29F1G08ABAEAH4-IT:E TR,from Micron Technology,is Memory ICs.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us ......
SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD
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MT29F1G08ABAEAH4-AATX:E TR
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The MT29F1G08ABAEAH4-AATX:E TR,from Micron Technology,is Memory ICs.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us ......
ALIXIN STOCK (HONG KONG) CO., LIMITED
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MT29F1G08ABAEAH4-IT:E TR
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The MT29F1G08ABAEAH4-IT:E TR,from Micron Technology,is Memory ICs.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us ......
Beijing Silk Road Enterprise Management Services Co.,LTD
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MT29F1G08ABAEAWP:E 1Gb X8 X16 NAND Flash Memory 200us Parallel 2.7V~3.6V
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... voltage: 2.7V~3.6V, 200µs parallel interface. Compatible Models MT29F1G08ABAEAWP, MT29F1G08ABAEAH4, MT29F1G08ABBEAH4, MT29F1G16ABBEAH4, MT29F1G08ABBEAHC, MT29F1G16ABBEAHC Key Features Open NAND Flash Interface (ONFI) 1.0-compliant Single-level cell (......
Shenzhen Filetti Technology Co., LTD
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