Multifunctional Power Transistor And IGBT High Voltage 1200V 40A
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... is designed to support applications with high frequency up to 60KHz, and offers a current density of 400A/c㎡. High Power IGBT is an ideal choice for use in a wide range of applications requiring high speed switching and high power. Technical Parameters:...
Reasunos Semiconductor Technology Co., Ltd.
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Multifunctional Power Transistor And Inverter IGBT 40A 1200V Fast Switching
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Multifunctional Power Transistor And Inverter IGBT High Voltage 1200V 40A Features • Positive temperature coefficient • Fast Switching • Low VCE(sat) • Reliable and Rugged ......
Guangdong Lingxun Microelectronics Co., Ltd
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RF Power Transistors PRFM51X02 IGBT Module-Dual MOTOROLA RF Power Transistors
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PRFM51X02 is a IGBT Module-Dual. Part NO: PRFM51X02 Brand: MOTOROLA Date Code: 03+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products are widely used in ......
Mega Source Elec.Limited
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FGH60N60SMD IGBT Power Transistor
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Fgh60n60sfd Igbt Power Transistor 60a 600v To247 Igbt Transistors Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom......
Shenzhen Retechip Electronics Co., Ltd
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Circuit Control Field Stop IGBT Power Transistor FGH60N60SMD 600V 60A
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... Parameter Distribution • RoHS compliant Applications • Solar Inverter, UPS, SMPS, PFC • Induction Heating Using Novel Field Stop IGBT Technology,...
Shenzhen Koben Electronics Co., Ltd.
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Transistors FF450R12ME4 IGBT Module Trench Field Stop Half Bridge Inverter
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Transistors FF450R12ME4 IGBT Module Trench Field Stop Half Bridge Inverter Product Description Of FF450R12ME4 FF450R12ME4 is 1200 V, 450 A dual IGBT Module with TRENCHSTOP™ IGBT4, Emitter Controlled HE diode and NTC. Also available with Thermal Interface Material or as variation with PressFIT mounting technology. Specification Of FF450R12ME4 Part Number FF450R12ME4 Power......
ShenZhen Mingjiada Electronics Co.,Ltd.
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IGBT Power Transistors NGTB40N120SWG Charging Pile Inverter Welding Chip
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...Igbt Power Module Transistors NGTB40N120SWG Charging Pile Inverter Welding Chip App Characteristics TJmax = 175°C • Soft Fast Reverse Recovery Diode Optimized for High Speed Switching 10 us Short Circuit Capability These are Pb−Free Devices Basic Data Product Attribute Attribute Value Manufacturer: onsemi Product Category: IGBT Transistors......
KZ TECHNOLOGY (HONGKONG) LIMITED
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IXYK110N120A4 IGBT Power Transistor 1200V 375A 1360W Through Hole TO-264
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IXYK110N120A4 IGBT PT 1200 V 375 A 1360 W Through Hole TO-264 (IXYK) IXYS Trench 650V to 1200V XPT™ GenX4™ IGBTs IXYS Trench 650V to 1200V XPT™ GenX4™ IGBTs are developed using a proprietary XPT thin-wafer technology and a state-of-the-art 4th generation (......
HongKong Wei Ya Hua Electronic Technology Co.,Limited
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BD135 Silicon NPN Power Transistors high voltage power mosfet dual power mosfet
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BD135 Silicon NPN Power Transistors high voltage power mosfet dual power mosfet This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. ......
ChongMing Group (HK) Int'l Co., Ltd
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Optimize Your Power System with IGBT Half Bridge Module and Strong Heat Dissipation Capability
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... exceptional performance in various industrial settings requiring efficient power management. This specific product falls under the category of IGBT Module and is known as the KWP75H12E4-7M IGBT Module Half-Bridge Circuit. It is engineered to cater to the...
Krunter Future Tech (Dongguan) Co., Ltd.
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