Anti EMI Superjunction Power Mosfet , Practical N Channel Power Mosfet
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Ultra Small Package Superjunction Power MOSFET with Large EMI Margin *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -webkit-font-smoothing: antialiased; } img, picture, video, canvas, ......
Reasunos Semiconductor Technology Co., Ltd.
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Planar N Channel High Power MOSFET Surface Mount Industrial Mosfet Transistor
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...Channel High Power MOSFET Surface Mount Industrial Mosfet Transistor Product Description: Our High Power MOSFET is designed to operate in a wide temperature range, from -55°C to +175°C, making it suitable for use in extreme environments. Its N-type configuration ensures optimal performance, providing high efficiency and reliability. Our High Power MOSFET......
Guangdong Lingxun Microelectronics Co., Ltd
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High Power MOSFET RFD12N06RLESM N-Channel UltraFET® Power MOSFET 60V 17A 71mΩ
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High Power MOSFET RFD12N06RLESM N-Channel UltraFET® Power MOSFET 60V 17A 71mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize in ......
Sunbeam Electronics (Hong Kong) Limited
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BSC011N03LSATMA1 MOSFET Power Electronics N-Channel OptiMOSTM Power-MOSFET 30V
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BSC011N03LSATMA1 MOSFET Power Electronics N-Channel OptiMOSTM Power-MOSFET 30V FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 37A (Ta), 100A (......
Shenzhen Sai Collie Technology Co., Ltd.
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F16N65L TO-220F-3L N-CHANNEL High Power MOSFET 16A 650V Applications In Switching Power Supplies And Adaptors
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... power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in...
Shenzhen Hunt Electronics Co., Ltd
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IGBT Power Module FMH23N50E - Fuji Electric - N-CHANNEL SILICON POWER MOSFET
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...power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing ......
Mega Source Elec.Limited
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IRFR9120N Power Mosfet Transistor P - Channel switching power mosfet
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IRFR/U9120N HEXFET® Power MOSFET • Ultra Low On-Resistance • P-Channel • Surface Mount (IRFR9120N) • Straight Lead (IRFU9120N) • Advanced Process Technology • Fast Switching • Fully Avalanche Rated Description Fifth Generation HEXFETs from International ......
Anterwell Technology Ltd.
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P Channel IPD06P004N Power MOSFET Transistor TO-252-3 Integrated Circuit Chip 60V
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... package is PG-TO252-3(Surface Mount). Specification Of IPD06P004N Part Number IPD06P004N FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25°C 16.4A (Tc) ......
ShenZhen Mingjiada Electronics Co.,Ltd.
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CSD17313Q2 Mosfet Power Transistor MOSFET 30V N Channel NexFET Power MOSFET
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...Mosfet Power Transistor MOSFET 30V N Channel NexFET Power MOSFET 1 Features Optimized for 5-V Gate Drive Ultra-Low Qg and Qgd Low Thermal Resistance Pb-Free RoHS Compliant Halogen-Free SON 2-mm × 2-mm Plastic Package 2 Applications DC-DC Converters Battery and Load Management Applications 3 Description This 30-V, 24-mΩ, 2-mm x 2-mm SON NexFETTM power MOSFET is designed to minimize losses in power......
ChongMing Group (HK) Int'l Co., Ltd
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N Channel IXFN39N90 Power MOSFET Module 900V 39A For DC-DC Converter SOT-227B
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...Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 900V Current - Continuous Drain (Id) @ 25°C 39A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 220 mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs 390nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 9200pF @ 25V Power......
Shenzhen Quanyuantong Electronics Co., Ltd.
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