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No Doped Silicon Carbide Substrate

1-10 Results for

no doped silicon carbide substrate

from 26 Products

Thickness 0.5mm 10x10mm HPSI Silicon Carbide Substrate

China Thickness 0.5mm 10x10mm HPSI Silicon Carbide Substrate on sale
... containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for...
SHANGHAI FAMOUS TRADE CO.,LTD

Address: Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799

Dark Gray Silicon Carbide Ceramic Plate: Versatile High-Strength Industrial Substrate

China Dark Gray Silicon Carbide Ceramic Plate: Versatile High-Strength Industrial Substrate on sale
Dark Gray Silicon Carbide Ceramic Plate: Versatile High-Strength Industrial Substrate Product Introduction This product is manufactured using high-performance silicon carbide ceramic material, presenting a dark gray matte finish with a mirror-level ......
Dayoo Advanced Ceramic Co.,Ltd

Address: No. 6, Shuangjin Street, Qiubin Industrial City, Qiubin Street, Wucheng District, Jinhua, Zhejiang

Black Silicon Carbide As Refractory In Ceramic Production Sic

China Black Silicon Carbide As Refractory In Ceramic Production Sic on sale
...Silicon Carbide Is Used as a Refractory in Ceramic Production Sic Description: Why can silicon carbide withstand such high voltages? Power devices, especially MOSFETs, must be able to handle extremely high voltages. SiC can achieve very high breakdown voltages, from 600V to several thousand volts, due to the dielectric breakdown strength of the electric field being about ten times higher than that of silicon. SiC can use higher doping...
Zhenan Metallurgy Co., Ltd

Address: Huafu Commercial Center, Wenfeng District, Anyang City, Henan Province, China

RDE Silicon Carbide Coating Machine CVD Chemical Vapor Deposition Furnace

China RDE Silicon Carbide Coating Machine CVD Chemical Vapor Deposition Furnace on sale
...silicon carbide on the surface of the semiconductor epitaxial susceptor and etching ring. Epitaxial base, a high-purity graphite disk, with a circular groove on it to fix the wafer substrate. After placing them in the furnace, a layer of crystal film will...
Zhuzhou Ruideer Metallurgy Equipment Manufacturing Co.,Ltd

Address: No.755, Xianyuehuan Rd, Tianyuan District, Zhuzhou, Hunan Province

4h-N Semi Silicon Carbide Wafer Sic Substrate Wafer for MOS Device

China 4h-N Semi Silicon Carbide Wafer Sic Substrate Wafer for MOS Device on sale
.... SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it...
Shenzhen A.N.G Technology Co., Ltd

Address: Room421, Fuquan Bldg A, Qingquan Road, Longhua District, Shenzhen,China 518109

4H-N SiC wafer manufacturer 4H-SI SIicon Carbide substrate semiconductor wafer supplier

China 4H-N SiC wafer manufacturer 4H-SI SIicon Carbide substrate semiconductor wafer supplier on sale
...Carbide substrate semiconductor wafer supplier Homray Material Technologyprovide high quality silicon carbide SiC wafer to electronic and opto electronicindustry. Silicon carbide SiC waferis a next generation semiconductor material, with unique electricalpropertiesand excellent thermal properties , compared to silicon wafer and galliumarsenide wafer ,silicon carbide......
Homray Material Technology

Address: 苏州吴中区苏蠡路

1200V 20A High Surge Silicon Carbide Power Schottky Diode DO-247 Package STPSC20H12WL

China 1200V 20A High Surge Silicon Carbide Power Schottky Diode DO-247 Package STPSC20H12WL on sale
...manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no ......
ShenZhen Mingjiada Electronics Co.,Ltd.

Address: 1239 New Asia Guoli Building Zhenzhong Road.,Futian district Shenzhen China

TNGA160402 Carbide Substrate For CNC PCD Inserts For Aluminum/Cutting Tool Carbide Substrate for PCD Diamond Inserts

China TNGA160402 Carbide Substrate For CNC PCD Inserts For Aluminum/Cutting Tool Carbide Substrate for PCD Diamond Inserts on sale
Product Description Product Parameter Product Name PCD insert Brand HHW Application Abrasion-resistance materials, such as ceramic, hard metal, silicon carbide. Stone and laminate flooring. composite materials,carbon fiber materials, silicon-aluminum alloy......
Henan Huanghe Whirlwind International Co.,Ltd.

Address: Huanghe Whirlwind Building, North-East corner, crossing of Qi Li He North Road and Xin Yi Road, Zhengzhou, Henan, China

Hard armor Bulletproof Plates Silicon carbide Boron carbide Ceramic independent protection

China Hard armor Bulletproof Plates Silicon carbide Boron carbide Ceramic independent protection on sale
...Silicon carbide Boron carbide Ceramic independent protection Boron Carbide Tile Uses: Systems, semiconductor components, sputtering targets industrial wear components, boron carbide tiles are used in police and military vehicles for protection. Applications for Boron Carbide Tile Boron Carbide Tiles Boron Carbide Substrate Tiles Boron Carbide Insulator Tiles Boron Carbide Panels Boron Carbide......
China Hunan High Broad New Material Co.Ltd

Address: No.70 Chezhan North Road,Changsha,Hunan,China

Glazed Polished Silicon Carbide Ceramic Parts Si3N4 Silicon Nitride Material

China Glazed Polished Silicon Carbide Ceramic Parts Si3N4 Silicon Nitride Material on sale
Nitride Ceramic Guide Roller Si3N4 Parts / Catalyst Substrate ceramic honeycomb for Heat EXchange Media parts : Quick Details: Optional Materials alumina, zirconia, silicon carbide, silicon nitride, steatite optional Outer diameter 0.5 ~800 mm Length 1~......
Shenzhen Luckym Technology Co., Ltd.

Address: 101/1F, Building A , Xinghui Science and Technology industrial Park, Huaning Road

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Products: Glazed Polished Silicon Carbide Ceramic Parts Si3N4 Silicon Nitride Material

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