A42 Silicon NPN Power Transistors , NPN Power Transistor High Current
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...Transistors A42 TRANSISTOR (NPN) FEATURE Low Collector-Emitter Saturation Voltage High Breakdown Voltage Marking :D965A MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 310 V VCEO Collector-Emitter Voltage 305 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 200 mA ICM Collector Current -Pulsed 500 mA PC Collector Power......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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600mA Silicon Power Transistor NPN Power Transistor High Current
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...Transistors A42 TRANSISTOR (NPN) FEATURE Low Collector-Emitter Saturation Voltage High Breakdown Voltage Marking :D965A MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 310 V VCEO Collector-Emitter Voltage 305 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 200 mA ICM Collector Current -Pulsed 500 mA PC Collector Power......
Beijing Silk Road Enterprise Management Services Co.,LTD
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BD135 Silicon NPN Power Transistors high voltage power mosfet dual power mosfet
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... complementary or quasi complementary circuits. Features • Pb−Free Packages are Available • DC Current Gain − hFE = 40 (Min) @ IC = 0.15 Adc • BD 135, 137, 139 are complementary with BD 136, 138, ......
Anterwell Technology Ltd.
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BD135 Silicon NPN Power Transistors high voltage power mosfet dual power mosfet
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... complementary or quasi complementary circuits. Features • Pb−Free Packages are Available • DC Current Gain − hFE = 40 (Min) @ IC = 0.15 Adc • BD 135, 137, 139 are complementary with BD 136, 138, ......
ChongMing Group (HK) Int'l Co., Ltd
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ADR4540BRZ RF Power Transistor - High Current High Gain And High Efficiency
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...Power Transistors Product Description: This ADR4540BRZ RF power transistor is designed for high frequency applications. It is capable of providing a maximum gain of 10dB, an average power output of 40 watts and a maximum output of 60 watts. The device also has a high......
Shenzhen Sai Collie Technology Co., Ltd.
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Low voltage NPN power transistor MJD31CT4 MJD31C TO-252 New and Original
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... Applications ■ General purpose switching and amplifier transistor Transistor Type NPN Current - Collector (Ic) (Max) 3A Voltage - Collector Emitter Breakdown (Max) 100V Vce Saturation (Max) @ Ib, Ic 1.2V @ 375mA, 3A Current - Collector Cutoff (Max)...
Mega Source Elec.Limited
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6DI30A 120 Power Switching Transistor Si NPN Power Transistor 6 Channel
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...NPN PNP Transistors 30A, 1200V, 6 CHANNEL, NPN, Si, POWER TRANSISTOR Electrical Characteristics Collector Current-Max (IC) 30A Collector-emitter Voltage-Max 1200V Configuration COMPLEX DC Current Gain-Min (hFE) 70A Fall Time-Max (tf) 3000 JESD-30 Code R-PUFM-X17 Number of Elements 6 Number of Terminals 17 Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR Package Style FLANGE MOUNT Polarity/Channel Type NPN Power......
DELI ELECTRONICS TECHNOLOGY CO.,LTD
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Switch Circuit High Voltage Npn Power Transistor TIP42C 100V 6A TO220 Package
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...Power Transistor MOSFET Transistors for Switch Circuit TIP41C TIP42C Description The TIP41C is a base island technology NPN power transistor in TO-220 plastic package that make this device suitable for audio, power linear and switching applications. The complementary PNP type is TIP42C Features Complementary PNP-NPN devices New enhanced series High......
Shenzhen ATFU Electronics Technology ltd
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IRF3205PBF Silicon Npn Power Transistors 55V 110A 8.0mΩ Power MOSFET
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...Npn Power Transistors 55V 110A 8.0mΩ Power MOSFET Npn Power Transistor Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power......
Shenzhen Retechip Electronics Co., Ltd
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Shielded High Current Power Inductors , High Current SMD Power Choke
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...high current power inductors,Surface Mount Power Inductor,High current SMD power choke FEATURES: Shielded construction Lowest height in this package footprint. Shielded construction. Lowest DCR/H, in this package size. Handles high transient current spikes without saturation. Ultra low buzz noise, due to composite construction. Frequency up to 5MHz. APPLCATIONS: PDA/notebook/desktop/server applications High current......
Shaanxi Shinhom Enterprise Co.,Ltd
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