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P Level 4h Sic Substrate

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p level 4h sic substrate

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2inch 4inch 6inch 8inch 5×5 mm 10×10 mm 4H-SiC Substrates 3C-N Type MOS Grade

China 2inch 4inch 6inch 8inch 5×5 mm 10×10 mm 4H-SiC Substrates 3C-N Type MOS Grade on sale
Overview of 3C-SiC Substrates 2inch 4inch 6inch 8inch 5×5 mm 10×10 mm 4H-SiC Substrates 3C-N Type MOS Grade 3C-N type silicon carbide (3C-SiC) substrate is a wide-bandgap semiconductor material based on the cubic crystal structure (3C), fabricated via ......
SHANGHAI FAMOUS TRADE CO.,LTD

Address: Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799

6H Or 4H SiC Substrate, N Type Or Semi-Insulating -Powerway Wafer

China 6H Or 4H SiC Substrate, N Type Or Semi-Insulating -Powerway Wafer on sale
...6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiC substrate,Which is applied......
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

Address: #506B, Henghui Business Center, No.77, Lingxia Nan Road, High Technology Zone, Huli, Xiamen 361006, China

SiC Substrate 4H/6H-P 3C-N 145.5 Mm~150.0 Mm Z Grade P Grade D Grade

China SiC Substrate  4H/6H-P 3C-N 145.5 Mm~150.0 Mm  Z Grade P Grade D Grade on sale
SiC Substrate 4H/6H-P 3C-N 45.5mm~150.0mm Z Grade P Grade D Grade 4H/6H-P 3C-N SiC substrate's Abstract This study explores the structural and electronic properties of 4H/6H polytype silicon carbide (SiC) substrates integrated with epitaxially grown 3C-N SiC films. The polytypic transition between 4H/6H-SiC and 3C-N-SiC offers unique opportunities to enhance the performance of SiC......
SHANGHAI FAMOUS TRADE CO.,LTD

Address: Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799

4 inch 4H-SI SiC wafer manufacturer SiC substrate supplier

China 4 inch 4H-SI SiC wafer manufacturer SiC  substrate supplier on sale
...4H-SI SiC wafer manufacturer SiC substrate supplier Homray Material Technology offers semiconductor silicon carbide wafers,4H-SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiC substrate......
Homray Material Technology

Address: 苏州吴中区苏蠡路

Automotive IGBT Modules A2U12M12W2-F2 3 Level Topology 1200V SiC Power MOSFET Power Module

China Automotive IGBT Modules A2U12M12W2-F2 3 Level Topology 1200V SiC Power MOSFET Power Module on sale
... that integrates the advanced silicon carbide Power MOSFET technology. This A2U12M12W2-F2 module leverages the innovative properties of the wide-bandgap SiC material and a high-thermal-performance substrate. The result is exceptionally low on...
ShenZhen Mingjiada Electronics Co.,Ltd.

Address: 1239 New Asia Guoli Building Zhenzhong Road.,Futian district Shenzhen China

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Products: Automotive IGBT Modules A2U12M12W2-F2 3 Level Topology 1200V SiC Power MOSFET Power Module

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