4H 6inch SiC Epitaxial Wafer 100μm/200μm/300μm for Ultra-High Voltage (UHV) MOS Device
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SiC Epi Wafer Overview 4H 6inch SiC Epitaxial Wafer 100μm/200μm/300μm for Ultra-High Voltage (UHV) MOS Device The 4H-SiC epitaxial wafer is a core material for carbon disulfide (SiC) power devices, fabricated on a 4H-SiC single-crystal ......
SHANGHAI FAMOUS TRADE CO.,LTD
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4H High Purity Semi Insulating SiC Carbide Wafer , Dummy Grade, Epi Ready,2”Size
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...SiC Carbide Wafer , Dummy Grade, Epi Ready,2”Size PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer......
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
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SiC wafer SiC Epitaxial wafer 4H-N HPSI 6H-N 6H-P 3C-N for MOS or SBD
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SiC Substrate & Epi-wafer Product Portfolio Brief We offer a comprehensive portfolio of high-quality silicon carbide (SiC) substrates and wafers, covering multiple polytypes and doping types (including 4H-N type [N-type conductive], 4H-P type [P-type ......
SHANGHAI FAMOUS TRADE CO.,LTD
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SiC Substrate Wafer Manufacturer 4 inch P Grade SiC Wafer Factory
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SiC Substrate Wafer Manufacturer 4 inch P Grade SiC Wafer Factory Homray Material Technology offers silicon carbide SiC n-type and p-tpye epitaxial wafer. SiC epi wafer is mainly used for Schottky diodes, metal-oxiHomray Material Technology offersthe best price on the market for high quality SiC wafers and silicon carbide epitaxial wafers......
Homray Material Technology
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