PBSS5350T,215 PNP Transistor 40V Voltage 3A Current Low Vce(sat) High Efficiency SOT-223 Package Halogen-Free Pb-Free Robust Performance for Power Switching and Amplification
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...PNP Transistor 40V Voltage 3A Current Low Vce(sat) High Efficiency SOT-223 Package Halogen-Free Pb-Free Robust Performance for Power Switching andamp; Amplification andnbsp; Features andbull; Low collector-emitter saturation voltage VCEsat and corresponding low......
TOP Electronic Industry Co., Ltd.
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High Power MOSFET NUS5530MN Integrated with PNP Low VCE(sat) Switching Transistor
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High Power MOSFET NUS5530MN Integrated with PNP Low VCE(sat) Switching Transistor [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize......
Sunbeam Electronics (Hong Kong) Limited
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2SB1424 ROHM UTC ICS Simbol Transistor Bipolar BJT ROHS 2SB1424 PNP Low VCE
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...Transistors - BJT ROHS 2SB1424 PNP Low VCE(sat) Transistor Product Paramenters Manufacturer: ROHM Semiconductor Product Category: Bipolar Transistors - BJT RoHS: Details Mounting Style: SMD/SMT Transistor Polarity: PNP Configuration: Single Collector- ......
ShenZhen QingFengYuan Technology Co.,Ltd.
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NPN PNP Transistors IXSN35N120U1 - TOSHIBA - High Voltage IGBT with Diode
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Quick Detail: High Voltage IGBT with Diode Description: VCES = 1200 V IC25 = 70 A VCE(sat) = 4 V Applications: ● International standard package mini BLOC (ISOTOP) compatible ● Aluminium-nitride isolation - high power dissipation ● Isolation voltage 3000......
Mega Source Elec.Limited
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ZX5T1951GTA Bipolar (BJT) Transistor PNP 60 V 6 A 120MHz 1.6 W SOT-223-3
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... Bipolar (BJT) Transistor PNP 60 V 6 A 120MHz 1.6 W SOT-223-3 Features • BVCEO > -60V • IC = -6A Continuous Collector Current • Low Saturation Voltage VCE(sat) < -95mV max @ -1A • RCE(sat) = 40mΩ for a low Equivalent On-Resistance • hFE ......
Shenzhen Xinyuanpeng Technology Co., Ltd.
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2SA1298-Y,LF Low Frequency Power Amplifier Application Power Switching Applications integrated semiconductor
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... (sat) = −0.4 V (max) (IC = −500 mA, IB = −20 mA) • Suitable for driver stage of small motor • Complementary to 2SC3265 • Small ......
ChongMing Group (HK) Int'l Co., Ltd
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GT20J101 Thyristor Module Insulated Gate Bipolar Transistor Silicon N Channel
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GT20J101 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications • The 3rd Generation • Enhancement-Mode • High Speed: tf = 0.30 µs (max) • Low Saturation Voltage: VCE (sat) = 2.7 V (max) Characteristic Symbol ......
DELI ELECTRONICS TECHNOLOGY CO.,LTD
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