TO-247 Isolated Gate Bipolar Transistor 650V-1200V For Power Supply Units
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Power Faster Switching Speed Isolated Gate Bipolar Transistor For Power Supply Units *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-webkit-font-smoothing: antialiased;}img, picture, video, ......
Guangdong Lingxun Microelectronics Co., Ltd
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KUP40H12R4-7M Insulated Gate Bipolar Transistor Module Assembly for Power Management
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...Isolated Gate Bipolar Transistor Assembly The Ultimate Solution for Power Management Product Description: The Insulated Gate Bipolar Transistor Module, commonly known as IGBT Module, is a crucial component in electronic circuits, offering efficient power control and switching capabilities. This versatile module combines the features of an Insulated Gate Transistor......
Krunter Future Tech (Dongguan) Co., Ltd.
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LTV-356T-D Power Isolator IC Industry-Leading Insulated Gate Bipolar Transistor (IGBT) Driver
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...Power Isolator IC Industry-Leading Insulated Gate Bipolar Transistor (IGBT) Driver Product: LTV-356T-D Power Isolator IC Features: • Maximum working voltage: 50V • Maximum output current: 1.5A • Operating temperature range: -40°C to +85°C • Lead-free and RoHS compliant • Low power......
Shenzhen Sai Collie Technology Co., Ltd.
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Non Isolated IGBT Insulated Gate Bipolar Transistor Power Module TCAN1042GDQ1
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...Isolated IGBT Insulated Gate Bipolar Transistor Power Module TCAN1042GDQ1 IGBT Power Module Texas Instruments/TI TCAN1042GDQ1 Protocols CAN, CAN FD Number of channels (#) 1 Supply voltage (V) 4.5 to 5.5 Bus fault voltage (V) -58 to 58 Signaling rate (Max) (Mbps) 5 TI functional safety category Functional Safety-Capable Rating Automotive Operating temperature range (C) -55 to 125 Low power......
Guangzhou Topfast Technology Co., Ltd.
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SI8233BB-D-IS Power Management ICs Gate Isolated Gate Drivers PMIC Power Supply Management
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...dc power supplies • Lighting control systems • Plasma displays • Solar and industrial inverters Safety Regulatory Approvals • UL 1577 recognized • Up to 5000 ......
Walton Electronics Co., Ltd.
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Stable Charging Pile Ultra Fast IGBT , Industrial Insulated Gate Bipolar Transistor
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... excellent combination of low conduction losses, high switching frequency, high reliability, and high current density. High Power IGBT has a current density of 400A/cm2 and an application frequency of 60KHz. It also has a number of advantages, such as its...
Reasunos Semiconductor Technology Co., Ltd.
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IKW40N120T2 Insulated Gate Bipolar Transistor IGBT 40A 1200V 480W For Converters
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... Product Category: IGBT Transistors Technology: Si Package / Case: TO-247-3 Collector- Emitter Voltage VCEO Max: 1.2 kV Collector-Emitter Saturation Voltage: 1.75 V Maximum Gate Emitter Voltage: - 20 V, + 20 V Continuous Collector Current at 25 C: 75 A...
Shenzhen Retechip Electronics Co., Ltd
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GT20J101 Thyristor Module Insulated Gate Bipolar Transistor Silicon N Channel
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... (sat) = 2.7 V (max) Characteristic Symbol Rating Unit Collector-emitter voltage VCES 600 V Gate-emitter voltage VGES +-20 V Collector current DC IC 20 A Collector current 1 ms ICP 40 A Collector power dissipation (Tc = 25°C) PC 130 W...
DELI ELECTRONICS TECHNOLOGY CO.,LTD
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GP4068D Power Mosfet Transistor INSULATED GATE BIPOLAR TRANSISTOR
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IRGP4068DPbF IRGP4068D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • Low VCE (ON) Trench IGBT Technology • Low Switching Losses • Maximum Junction temperature 175 °C • 5 µS ......
Anterwell Technology Ltd.
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MGW12N120D Power Mosfet Transistor Insulated Gate Bipolar Transistor with Anti-Parallel Diode
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Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–247 12 A @ 90°C 20 A @ 25°C 1200 VOLTS SHORT CIRCUIT RATED This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft ......
ChongMing Group (HK) Int'l Co., Ltd
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