Circuit Protection Power Mos Transistor Chip IPD060N03LGATMA1
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...Transistor Chip Discrete Semiconductors Circuit protection IPD060N03LGATMA1 Product range OptiMOSª3 Power-Transistor,MOSFET N-CH 30V 50A TO-252 Basic data Product Attribute Attribute Value Manufacturer: Infineon Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: TO-252-3 Transistor......
KZ TECHNOLOGY (HONGKONG) LIMITED
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RF Power Transistors BLF248 VHF push-pull power MOS transistor
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... range.The transistor is encapsulated in a 4-lead SOT262 A1 balanced flange envelope, with two ceramic caps. The mounting flange provides the common source connection for the transistors. Applications: • High power gain • Easy power control •...
Mega Source Elec.Limited
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High Power Mos Transistor IC Chip FDPC5018SG Electronic Parts
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FDPC5018SG Electronic part MOS transformer Bom service Original high power mosfet transistor #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#......
Shenzhen Res Electronics Limited
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SGT75T65SDM1P7 TO-247 Inverter High Frequency IGBT Tube Electronic Component High Power MOS Transistor
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Shenzhen Anxinruo Technology Co., Ltd.
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STGIPS20K60 Mosfet Power Module Transistor Chip IC Electronics Rectifier Diode China Supplier
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STGIPS20K60 Mosfet Power Module Transistor Chip IC Electronics Rectifier Diode China Supplier Features ■ 17 A, 600 V 3-phase IGBT inverter bridge including control ......
ChongMing Group (HK) Int'l Co., Ltd
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Integrated Circuit Chip IXBH10N300HV 3000V Monolithic Bipolar MOS Transistor 180W
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... MOS Transistor. Specification Of IXBH10N300HV Part Number IXBH10N300HV Voltage - Collector Emitter Breakdown (Max) 3000 V Current - Collector (Ic) (Max) 34 A Current - Collector Pulsed (Icm) 88 A Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 10A Power - Max 180 W...
ShenZhen Mingjiada Electronics Co.,Ltd.
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Fast Switching Time Mos Field Effect Transistor , Power Switch Transistor
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..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 A (Vgs= 10V) - 8 A (Vgs= -10V) 12.9 mΩ...
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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Fast Switching Time Mos Field Effect Transistor , Power Switch Transistor
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..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 A (Vgs= 10V) - 8 A (Vgs= -10V) 12.9 mΩ...
Beijing Silk Road Enterprise Management Services Co.,LTD
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MOSFET Transistors N Channel MOS Transistor Integrated Circuit Chips IMBG65R039M1HXTMA1
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Transistor N Channel MOS Transistor IMBG65R039M1HXTMA1 New Parts MOSFET Transistors Product Description Commutation robust fast body diode Reduced system cost and complexity Higher robustness and system reliability Product Specifications Part ......
Shenzhen Tengshengda ELECTRIC CO., LTD.
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N Channel Power Mosfet Transistor , 2SK3561 MOS Field Effect Transistor
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N Channel Power Mosfet Transistor , 2SK3561 MOS Field Effect Transistor TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3561 Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) • High forward ......
Anterwell Technology Ltd.
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