High Ruggedness IGBT Power Transistor IKW25N120T2 K25T1202 1200V 25A
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... discrete with anti-parallel diode in TO-247 package Infineon 1200V Gen8 IGBTs feature trench gate field stop technology delivered in industry standard TO-247 packages to provide best-in-class performance for ......
Shenzhen Retechip Electronics Co., Ltd
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Multifunctional Power Transistor And IGBT High Voltage 1200V 40A
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... is designed to support applications with high frequency up to 60KHz, and offers a current density of 400A/c㎡. High Power IGBT is an ideal choice for use in a wide range of applications requiring high speed switching and high power. Technical Parameters:...
Reasunos Semiconductor Technology Co., Ltd.
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IGBT Power Module 7MBR15SA120B IGBT(1200V/15A/PIM) FUJITSU IGBT Power Module
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...IGBT(1200V/15A/PIM) . Part NO: 7MBR15SA120B Brand: FUJITSU Date Code: 05+ Quality Warranty: 3 Months Mounting Type: Screws Overview We specialize in high power and power conversion modules of famous brands Categories include: Darlington Schottky, rectifier intelligent, IGBT, IPM, GTR, DC-DC, AC-DC rectifier and power supply and other modules. Applications: power......
Mega Source Elec.Limited
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650V-1200V IGBT Power Transistor For High Power Electronic Controls
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...Power Transistor IGBT For High-Power Electronic Controls Product Description: The High-Power IGBT is packaged in a TO-247 package type, which is ideal for high-power applications. It has a voltage rating of 650V-1200V and can operate at an application frequency of 20KHz-60KHz, making it suitable for various applications. One of the key features of the High-Power IGBT......
Guangdong Lingxun Microelectronics Co., Ltd
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Siemens 6SY7000-0AE73 S SIMOVERT MASTER DRIVES IGBT TRANSISTOR MODULE 300A 1200V
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...-0AE73 S SIMOVERT MASTER DRIVES IGBT TRANSISTOR MODULE 300A 1200V Descripition Part Number 6SY7000-0AE73 Manufacturer / Brand SIEMENS Category Discrete Semiconductor Products > Transistors - IGBTs - Modules Description IGBT Modules Description IC FLASH ......
Shenzhen Wisdomlong Technology CO.,LTD
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IXYK110N120A4 IGBT Power Transistor 1200V 375A 1360W Through Hole TO-264
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... thin-wafer technology and a state-of-the-art 4th generation (GenX4™) trench IGBT process. These insulated-gate bipolar transistors feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. The...
HongKong Wei Ya Hua Electronic Technology Co.,Limited
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IRG7PH42UDPBF IGBT Power Transistors 1200V 85A 320W TO247AC Infineon Technologies 7PH42 Mosfet
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...IGBT Power Module Transistors IGBTs Single IRG7PH42UDPBF Specifications Part Status Active IGBT Type Trench Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 85A Current - Collector Pulsed (Icm) 90A Vce(on) (Max) @ Vge, Ic 2V @ 15V, 30A Power......
KZ TECHNOLOGY (HONGKONG) LIMITED
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Automotive IGBT Modules FF50R12RT4 IGBT 1200V 50A Transistors Modules Chassis Mount
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Automotive IGBT Modules FF50R12RT4 IGBT 1200V 50A Transistors Modules Chassis Mount [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery ......
ShenZhen Mingjiada Electronics Co.,Ltd.
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FGA25N120ANTD Power Mosfet Transistor New & Original 1200V NPT Trench IGBT
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FGA25N120ANTD/FGA25N120ANTD_F109 1200V NPT Trench IGBT Features • NPT Trench Technology, Positive temperature coefficient • Low saturation voltage: VCE(sat), typ = 2.0V @ IC = 25A and TC = 25°C • Low switching loss: Eoff, typ = 0.96mJ @ IC = 25A and TC = ......
Anterwell Technology Ltd.
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FF450R12ME4 IGBT Modules IGBT 1200V 450A
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... Saturation Voltage: 1.75 V Continuous Collector Current at 25 C: 675 A Gate-Emitter Leakage Current: 400 nA Pd - Power Dissipation: 2.25 kW Minimum Operating Temperature: - 40 C Maximum Operating Temperature: + 150 C...
Wisdtech Technology Co.,Limited
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