4inch SiC Epitaxial Wafer 4H-N Diameter 100mm Thickness 350μm Prime Grade
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... SiC epitaxial wafer 4H overview 4inch SiC Epitaxial Wafer 4H-N Diameter 100mm Thickness 350μm Prime Grade As a core material for silicon carbide (SiC) power device manufacturing, the 4-inch SiC epitaxial wafer is based on a 4H-N-type SiC wafer, grown......
SHANGHAI FAMOUS TRADE CO.,LTD
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SiC Epitaxial Wafer 4H/6H SiC Substrates Custom Thickness Doping
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...RF device manufacturers worldwide. The 4” wafer size strikes an excellent balance between performance, availability, and cost-effectiveness—making it the industry’s mainstream choice for mid-to-high volume production. SiC epitaxial wafers consist of...
SHANGHAI FAMOUS TRADE CO.,LTD
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SiC Substrate Wafer Manufacturer 4 inch P Grade SiC Wafer Factory
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SiC Substrate Wafer Manufacturer 4 inch P Grade SiC Wafer Factory Homray Material Technology offers silicon carbide SiC n-type and p-tpye epitaxial wafer. SiC epi wafer is mainly used for Schottky diodes, metal-oxiHomray Material Technology offersthe best price on the market for high quality SiC wafers and silicon carbide epitaxial wafers......
Homray Material Technology
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N Type , GaSb Wafer With Epitaxy-Ready Polished Surface , 4”, Prime Grade
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...Wafer With Epitaxy-Ready Polished Surface , 4”, Prime Grade PAM-XIAMEN manufactures high purity single crystal GaSb(Gallium Antimonide) Wafers Gallium antimonide (GaSb) is a semiconducting compound of gallium and antimony of the III-V family. It has a lattice constant of about 0.61 nm. It has a band gap of 0.67 eV. Our standard wafer diameters range from 1 inch to 4 inches, wafers......
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
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1500C CVD SIC Epitaxy Growth Furnace for Silicon Carbide Growth in 1000*1000*1500mm Effective Space
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... of the semiconductor epitaxial susceptor and etching ring. Epitaxial base, a high-purity graphite disk, with a circular groove on it to fix the wafer substrate.After placing them in the furnace, a layer of crystal film will grow on the surface of the...
Zhuzhou Ruideer Metallurgy Equipment Manufacturing Co.,Ltd
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Semiconductor Silicon Wafer Prime Grade 3 Inch To 12 Inch
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Semiconductor Silicon Wafer Prime Grade 3 Inch To 12 Inch Silicon wafer is a material used for producing semiconductors, which can be found in all types of electronic devices that improve the lives of people. Silicon comes second as the most common element......
Hangzhou Freqcontrol Electronic Technology Ltd.
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200mm 300mm Sapphire Wafer Single Side Polished Wafer
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... optical grade Kyropoulos grown sapphire crystals. high purity single crystal sapphire epitaxial substrate is suitable for direct epitaxial process, PSS process, ALN process and other epitaxial methods. It has the characteristics of uniform wavelength,...
Chongqing Silian Optoelectronic Science & Technology Co., Ltd.
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500Um To 625Um GaAs Based Epi Wafer Polished Grade mechanical grade
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GaAs Based Epi Wafer We provides MBE / MOCVD epitaxial growth of custom structure on GaAs substrate for microelectronics , optoelectronics and RF Microwave applications , in diameter Ø 3" to Ø 4” . With our extensive MOCVD experience , we can grow binary ......
HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD
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Prime Quality 1050 1060 1070 1100 3003 8011 Aluminium Wafer For Cookware Decoration Light Cover Solar Cover
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Product description (1) Work ability : Resistance against corrosion:； Excellent formability； Excellent welding characteristics； Excellent ductile property； Excellent resistance to corrosion； Excellent conductivity. Specification&Applications item value ......
HENAN HOBE METAL MATERIALS CO.,LTD.
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LED Substrate Grinding Wheels Metal Bonded Abrasives ISO14001
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...epitaxial wafers. They can be used steadily on the Japanese, Korean and Taiwanese grinders with high performance. Workpiece: sapphire epitaxial wafer, SiC substrate epitaxial wafer, Si substrate epitaxial wafer. Material of workpiece: Synthetic sapphire, SiC......
China Abrasives Industry Hainan Corporation
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