CYW43362KUBGT Rf Mosfet Transistors 2.4 GHz WLAN CMOS Amplifier
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CYW43362KUBGT RF Power Transistor 2.4 GHz WLAN CMOS amplifier Package 69-UFBGA Type TxRx + MCU RF Family/Standard WiFi Protocol 802.11b/g/n Modulation 16QAM, 64QAM, BPSK, CCK, DSSS, QPSK, OFDM Frequency 2.4GHz Data Rate (Max) 72Mbps Power - Output 18.5dBm ......
Shenzhen Sai Collie Technology Co., Ltd.
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BLF6G10LS-135RN RF MOSFET Transistors Trans MOSFET N-CH 65V 32A 3-Pin
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...RF MOSFET Transistors Trans MOSFET N-CH 65V 32A 3-Pin Manufacturer: Ampleon Product Category: RF MOSFET Transistors Transistor Polarity: N-Channel Technology: Si Id - Continuous Drain Current: 32 A Vds - Drain-Source Breakdown Voltage: 65 V Rds On - Drain-Source Resistance: 100 mOhms Operating Frequency: 700 MHz to 1 GHz......
Wisdtech Technology Co.,Limited
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PD57018-E RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistors Black RF MOSFET Transistors
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... Current: 2.5 A Vds-drain-source breakdown voltage: 65 V Rds On-Drain Source On Resistance: 760 mOhms Operating frequency: 1 GHz Gain: 16.5 dB Output power: 18 W Minimum operating temperature: - 65 C Maximum operating temperature: + 150 C...
Beijing Silk Road Enterprise Management Services Co.,LTD
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2SC3356- T1B NPN Silicon RF Power Mosfet Transistor 100 mA Collector Current
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... Silicon RF Power Mosfet Transistor 100 mA Collector Current FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz ABSOLUTE ......
Anterwell Technology Ltd.
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MRF9030GNR1 power mosfet module Power Mosfet Transistor RF POWER FIELD EFFECT TRANSISTORS
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...RF Sub–Micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N–Channel Enhancement–Mode Lateral MOSFETs 945 MHz, 30 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz......
ChongMing Group (HK) Int'l Co., Ltd
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PD85035S-E PD85035STR-E PD85035-E RF power transistor MOSFETS
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...RF power transistor MOSFETS The PD85035-E is a common source N-channel,enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz......
Angel Technology Electronics Co
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MRF9060S - Motorola, Inc - 945 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
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Quick Detail: MRF9060S - Motorola, Inc - 945 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs Description: Designed for broadband commercial and industrial applications with frequen- cies up to 1.0 GHz. The high gain and broadband performance......
Mega Source Elec.Limited
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