BLF174XRS Radio Frequency RF Power Transistor Manufacturers
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BLF174XRS N/A Electronic Components IC MCU Microcontroller Integrated Circuits BLF174XRS #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-......
Shenzhen Kaigeng Technology Co., Ltd.
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SI4010-C2-GSR RF Power Transistor - High Performance And Reliable Power Solution
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...RF Power Transistors Product Description: The SI4010-C2-GSR is a high-performance RF power transistor specifically designed for use in narrow band, high power applications such as cellular, PCS, and 3G infrastructure. The device is manufactured using a special GaN on SiC process that provides high efficiency, high power......
Shenzhen Sai Collie Technology Co., Ltd.
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RF Power Transistors MRF5177 - Motorola, Inc - 30W, 400MHZ RF POWER TRANSISTOR NPN SILICON
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...RF POWER TRANSISTOR NPN SILICON Description: …designed for VHK/UHF power amplifier applications.This device is optimized for rugged performance in 225-400MHz communications equipment. Applications: Performance @400MHz,28Vdc-Power Output=30W(Min) Gain=6.0dB(Min) Isothermal Design for Rugged Performance-Tested at 30:1VSWR through all phase angles Specifications: part no. MRF5177 Manufacturer...
Mega Source Elec.Limited
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D2085UK 28V120W 1MHz-1000MHz Push-pull RF Power Transistor MOSFET
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...RF POWER TRANSISTOR MOSFET Manufacturer: TT Electronics Product Category: TT Electronics Brand: Semelab / TT Electronics The D2085UK is a push-pull RF power transistor MOSFET that operates at a voltage of 28V and can handle a power output of 120W. It is designed for use in the frequency range of 1MHz to 1000MHz. Silicon MOSFET: MRF140: RF MOSFET Line, 30W, up to 400MHz, 28V [1] MRF134: Broadband RF Power...
Wisdtech Technology Co.,Limited
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RD06HVF1 RF Power Transistor 175MHz 6W Silicon Carbide Transistor For Amplifiers
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... applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power amplifiers in VHF band mobile radio sets. List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND ...
Shenzhen Koben Electronics Co., Ltd.
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50W Gallium Nitride 28V DC to 4GHz High Electron Mobility GAN RF Power Transistor
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...RF Power Transistor Product Description Innotion’s YP01401650T is a 50-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 4000MHz. The transistor......
Zhongshi Zhihui Technology (suzhou) Co., Ltd.
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Wide Band 700-3600MHz 20W RF Power Transistor LDMOS FETs 28V Broad-Band LDMOS RF Transistor, High Power RF Transistors
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VBE Technology Shenzhen Co., Ltd.
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MDmesh DM6 High Voltage Mosfet , Enhancement Rf Power Transistor For LED Lighting
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Mosfet Power Transistor STWA65N60DM6 Mosfet N-channel 600 V, 0.084 Ohm typ., 30 A MDmesh DM6 Power TO-247 Feature • Extremely low RDS(on)*area and Qg and optimized capacitance profi le for light load conditions • Extremely ......
Shenzhen Weitaixu Capacitor Co.,Ltd
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PD85035S-E PD85035STR-E PD85035-E RF power transistor MOSFETS
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PD85035S-E PD85035STR-E PD85035-E RF power transistor MOSFETS The PD85035-E is a common source N-channel,enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates......
Angel Technology Electronics Co
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BFS505 15V RF Power Transistor , 18mA 9GHz 150mW Surface Mount Transistor
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...Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF......
DELI ELECTRONICS TECHNOLOGY CO.,LTD
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