2 Inch DSP SSP Gallium Nitride Wafer A Axis Sapphire Substrates GaN Epitaxial Templates
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2inch R-axis sapphire wafer for epi-ready test ,sapphire optical windows, R-axis 2inch sapphire epi-ready substrate 1. Description Sapphire is one of the hardest materials, and possesses very good transmission during the range of visible and near IR ......
SHANGHAI FAMOUS TRADE CO.,LTD
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10*10mm2 Mg-Doped GaN Epitaxial Wafers On Sapphire Substrates For GaN Power Amplifier
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...GaN Epitaxial Wafers On Sapphire Substrates For GaN Power Amplifier PAM-XIAMEN’s Template Products consist of crystalline layers of gallium nitride (GaN), aluminum nitride (AlN),aluminum gallium nitride (AlGaN)and indium gallium nitride (InGaN), which are deposited on sapphire substrates. PAM-XIAMEN’s Template Products enable 20-50% shorter epitaxy cycle times and higher quality epitaxial......
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
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2inch 4Inch Gallium Nitride GaN AlN Template Wafer On Sapphire,Si Substrates
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.... Product Aluminum nitride (AlN) film Product Description: AllN Epitxial proposed model saphhire hydride vapor phase epitaxy (HVPE) method. Aluminum nitride film is also cost-effective way to replace the...
SHANGHAI FAMOUS TRADE CO.,LTD
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2" 4" 6" LED Sapphire Substrate , Colorless Optical Window Glass
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..., mainly because it has been unable to find a substrate that matches the lattice constant of GaN, resulting in the density of defects in the epitaxial crystal. Too high, until 1991, Nichia Co. researcher S. Nakamura used low-temperature growth of an...
Chongqing Silian Optoelectronic Science & Technology Co., Ltd.
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Silicon Back Grinding Wheels Sapphire Epitaxial Wafer For Simiconductor Field
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..., silicon wafer, gallium arsenide and GaN wafer. This kind of grinding wheel developed in out company can replace foreign products. They can be used steadily on the Japanese, Korean grinders with high ......
SIGNI INDUSTRIAL (SHANGHAI) CO., LTD
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GaN Templates 2 & 4 inch
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...GaN Templates: Dimensions:Ф 50.8mm ± 0.1mm Thickness:4 µm, 20 µm; 4 µm Orientation:C-plane(0001) ± 0.5° Conduction Type:N-type(Undoped); N-type(Si-doped); P-type(Mg-doped) Resistivity(300K): < 0.5 Ω·cm; < 0.05 Ω·cm; ~ 10 Ω·cm Carrier Concentration: < 5x1017 cm-3; > 1x1018 cm-3; > 6x1016 cm-3 Mobility: ~ 300cm2/V·s; ~ 200 cm2/V·s; ~ 10 cm2/V·s Dislocation Density: Less than 5x108 cm-2 Substrate structure: GaN on Sapphire......
Chongqing Newsin Technology Co., Ltd
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ZnO Crystal Substrate Is Used In GaN(blue LED) Epitaxial Substrate Wide Band Connection Devices And Other Fields
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...GaN(blue LED) epitaxial substrate wide band connection devices and other fields Zinc oxide (ZnO) crystal substrate is widely used in GaN(blue LED) epitaxial substrate, wide band connected devices and other fields. Zinc oxide single crystal is a good substrate material for GaN......
Hangzhou Freqcontrol Electronic Technology Ltd.
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GaN on Sapphire wafer manufacturer 2 Inch GaN Substrate
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GaN on Sapphire wafer manufacturer 2 Inch GaN SubstrateAs the leading manufacturer of GaN substrate, Homray Material Technology provide GaN On Sapphire wafer. The size are 2inch and 4 inch. GaN layer thickness is 4.5um±0.5um or 20um±2um. @font-face{ font......
Homray Material Technology
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Polished C Orientation Transparent Sapphire Substrate 100um DSP/SSP Layer Template
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... (single-sided polishing). With a thickness of 100um, this substrate is perfect for a wide range of applications, including microelectronics, optics, and more. Whether you need a 4 inch sapphire substrate or a 3 inch sapphire substrate, our product is the...
ARH Sapphire Co., Ltd
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6A2 Back Grinding Wheel High Efficiency Custom Size Sapphire Epitaxial Wafer
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6A2 Back Grinding Wheel High Efficiency Custom Size Sapphire Epitaxial Wafer Hongtuo, as a major designer, manufacturer and distributor of diamond and CBN grinding wheels, can offer an excellent selection of back grinding wheels. This particular grinding ......
Zhengzhou Hongtuo Superabrasive Products Co., Ltd.
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