Si Doped Semiconductor Substrate Gallium Arsenide GaAs Wafer For Microwave/HEMT/PHEMT
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... GaAs Wafer Product Description (GaAs) Gallium Arsenide Wafers PWAM Develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer.We has used advanced crystal growth technology,vertical gradient freeze(VGF) and GaAs wafer......
SHANGHAI FAMOUS TRADE CO.,LTD
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Dia 50.8mm 2 Inch Gallium Arsenide Wafer For Semiconductor Substrate
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2inch GaAs substrates, GaAs wafer for led,Gallium Arsenide crystal Wafers,Si/Zn Dopant GaAs wafer(A compound of the elements gallium and arsenic. It is a III-V direct bandgap semiconductor with a zinc blende crystal structure......
SHANGHAI FAMOUS TRADE CO.,LTD
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FBGA/PBGA/LGA Package Semiconductor Substrate manufacture
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Application:Semi Package,Semiconductors ,Semiconductor,IC package,IC substrate,uMCP,MCP,UFS,CMOS,MEMS,IC assembly,Storage IC substrage;Smart phone -.Lap top (Ultra thin notebook / ......
HongRuiXing (Hubei) Electronics Co.,Ltd.
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P Type , GaAs(Gallium Arsenide) Substrate ,3”, Dummy Grade -Wafer Manufacturing
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... used advanced crystal growth technology,vertical gradient freeze(VGF) and GaAs wafer processing technology,established a production line from crystal growth, cutting, grinding to polishing processing and built a 100-class ......
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
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500Um To 625Um GaAs Based Epi Wafer Polished Grade mechanical grade
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GaAs Based Epi Wafer We provides MBE / MOCVD epitaxial growth of custom structure on GaAs substrate for microelectronics , optoelectronics and RF Microwave applications , in diameter Ø 3" to Ø 4” . With our extensive MOCVD experience , we can grow binary alloy ( LT-GaAs , AlAs ) or ternary alloy ( AlGaAs , InGaAs ,GaAsP , InGaP ) on GaAs substrate......
HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD
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IC HMC410AMS8GE 410AMS8GE rf mixer High IP3 MIXER DBL-BAL mix SMT 9-15 GHz GaAs MMIC DOUBLE-BALANCED RF Integrated Circuits
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HMC410AMS8G / 410AMS8GE GaAs MMIC DOUBLE-BALANCED HIGH IP3 MIXER, 9 - 15 GHz Product Description RF Frequency: 9 GHz to 15 GHz Conversion Loss - Max: 11 dB NF - Noise Figure: 8 dB Maximum Operating Temperature: + 85 C Minimum Operating Temperature: - 40 C ......
Shenzhen Quanyuantong Electronics Co., Ltd.
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Dielectric Constant 8-9 AIN Ceramic Substrate for Semiconductor Power Module
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... thermal conductivity Aluminum Nitride (AIN) ceramic, this substrate offers exceptional thermal management and electrical insulation properties, making it an ideal choice for a wide range of industrial applications. Surface Finish: ......
Wuxi Special Ceramic Electrical Co.,Ltd
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Semiconductor Strain Gauge Transducer SPD High Speed Bending Plate Scales
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Semiconductor Strain Gauge Transducer SPD High Speed Bending Plate Scales Semiconductor Strain Gauges SPD Semiconductor strain gauge (in the substrate) Send Inquiry SPECIFICATION Related Products Semiconductor strain gauge (in the substrate) F1 F2 F3 F4 F5 substrate: 8×4 silicon: D leg: 30 substrate: 7×4 silicon: B,C leg: 20~25 substrate: 8×3.5 silicon: B,C,D leg: 22 substrate: 8×2.5 silicon: B,C leg: 7.5~7.8 substrate......
Top Sensor Technology Co.Ltd
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4h-N Semi Silicon Carbide Wafer Sic Substrate Wafer for MOS Device
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... and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it...
Shenzhen A.N.G Technology Co., Ltd
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Sintering Furnace 400mm Si3N4 Ceramic Pcb Substrate
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... ceramic substrate; 2. The thermal expansion coefficient (3.1×10-6/℃) matches the semiconductor silicon material (3.5-4.0×10-6/℃); 3. The bending strength is higher than that of the alumina substrate, which is twice that of the alumina substrate; 4....
Jinghui Industry Limited
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